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w25q16cv p ublication release date: october 03 , 201 3 - 1 - revision g 3v 16m - bit serial flash memory with dual and quad spi
w25q16cv - 2 - table of contents 1. general description ................................ ................................ ................................ ............... 5 2. features ................................ ................................ ................................ ................................ ....... 5 3. package types and pi n configurations ................................ ................................ .......... 6 3.1 pin configuration soic / vsop 150 / 208 - mil ................................ ................................ ..... 6 3.2 pad configuration wson 6x5 - mm ................................ ................................ ...................... 6 3.3 pin configuration pdip 300 - mil ................................ ................................ ............................ 7 3.4 pin descr iption soic / vsop 150/208 - mil, wson 6x5 - mm & pdip 300 - mil ..................... 7 3.5 pin configuration soic 300 - mil ................................ ................................ ........................... 8 3.6 pin description soic 300 - m il ................................ ................................ ............................... 8 3.7 ball configuration tfbga 8x6 - mm ................................ ................................ ...................... 9 3.8 ball description tfbga 8x6 - mm ................................ ................................ ......................... 9 4. pin descriptions ................................ ................................ ................................ ...................... 10 4.1 chip select (/cs) ................................ ................................ ................................ ................ 10 4.2 serial data input, output and ios (di, do and io0, io1, io2, io3) ................................ .. 10 4.3 write protect (/wp) ................................ ................................ ................................ ............. 10 4.4 hold (/hold) ................................ ................................ ................................ ................... 10 4.5 seria l clock (clk) ................................ ................................ ................................ .............. 10 5. block diagram ................................ ................................ ................................ .......................... 11 6. functional descripti on ................................ ................................ ................................ ....... 12 6.1 spi operations ................................ ................................ ................................ ............. 12 6.1.1 standard spi instructions ................................ ................................ ................................ ..... 12 6.1.2 dual spi instructions ................................ ................................ ................................ ............ 12 6.1.3 qu 3 ad spi instructions ................................ ................................ ................................ ........ 12 6.1.4 hold function ................................ ................................ ................................ ....................... 12 6.2 write protection ................................ ................................ ................................ ....... 13 6.2.1 write protect features ................................ ................................ ................................ ......... 13 7. status registers and instructions ................................ ................................ ............... 14 7.1 status regi sters ................................ ................................ ................................ ........ 14 7.1.1 busy status (busy) ................................ ................................ ................................ ........... 14 7.1.2 write enable latch status (wel) ................................ ................................ ......................... 14 7.1.3 block protect bits (bp2, bp1, bp0) ................................ ................................ ...................... 14 7.1.4 top/bottom block protect bit (tb) ................................ ................................ ........................ 14 7.1.5 sector/block protect bit (sec) ................................ ................................ ............................. 14 7.1.6 complement protect bit (cmp) ................................ ................................ ............................ 15 7.1.7 status register protect bits (srp 1, srp0 ) ................................ ................................ .......... 15 7.1.8 erase/program suspend status (sus) ................................ ................................ ................ 15
w25q16cv publication release date: october 03 , 201 3 - 3 - revision g 7.1.9 security register lock bits (lb3, lb2, lb1) ................................ ................................ ........ 15 7.1.10 quad enable bit ( qe ) ................................ ................................ ................................ ......... 16 7.1.11 status register memory protection (cmp = 0) ................................ ................................ ... 17 7.1.12 status register memory protec tion (cmp = 1) ................................ ................................ ... 18 7.2 instructions ................................ ................................ ................................ ................. 19 7.2.1 manufacturer and device identification ................................ ................................ ................ 19 7.2.2 instruction set table 1 (erase, program instructions) ( 1 ) ................................ ....................... 20 7.2.3 instruction set table 2 (read instructions) ................................ ................................ .......... 21 7.2.4 instruction set table 3 (id, security instructions) ................................ ................................ 22 7.2.5 write enable (06h) ................................ ................................ ................................ ............... 23 7.2.6 write enable for vol atile status register (50h) ................................ ................................ .... 23 7.2.7 write disable (04h) ................................ ................................ ................................ ............... 24 7.2.8 read status register - 1 (05h) and read status register - 2 ( 3 5h) ................................ ......... 25 7.2.9 write status register (01h) ................................ ................................ ................................ .. 25 7.2.10 read data (03h) ................................ ................................ ................................ ................. 27 7.2.11 fast read (0bh) ................................ ................................ ................................ ................. 28 7.2.12 fast read dual output (3bh) ................................ ................................ ............................. 29 7.2.13 fast read quad output (6bh) ................................ ................................ ............................ 30 7.2.14 f ast read dual i/o (bbh) ................................ ................................ ................................ ... 31 7.2.15 fast read quad i/o (ebh) ................................ ................................ ................................ . 33 7.2.16 word read q uad i/o (e7h) ................................ ................................ ................................ 35 7.2.17 octal word read quad i/o (e3h) ................................ ................................ ....................... 37 7.2.18 set burst with wrap (77h) ................................ ................................ ................................ .. 39 7.2.19 continuous read mode bits (m7 - 0) ................................ ................................ ................... 40 7.2.20 continuous read mode reset (ffh or ffffh) ................................ ................................ .. 40 7.2 .21 page program (02h) ................................ ................................ ................................ ........... 41 7.2.22 quad input page program ( 3 2h) ................................ ................................ ........................ 42 7.2.23 sector erase (20h) ................................ ................................ ................................ ............. 43 7.2.24 32kb block erase (52h) ................................ ................................ ................................ ..... 44 7.2.25 64kb block erase (d8h) ................................ ................................ ................................ ..... 45 7.2.26 chip erase (c7h / 60h ) ................................ ................................ ................................ ....... 46 7.2.27 erase / program suspend (75h) ................................ ................................ ......................... 47 7.2.28 erase / program resume (7ah) ................................ ................................ ......................... 48 7.2.29 power - down (b9h) ................................ ................................ ................................ .............. 49 7.2.30 release power - down / device id (abh) ................................ ................................ ............. 50 7.2.31 read manufacturer / device id (90h) ................................ ................................ ................. 52 7.2.32 read manufacturer / device id dual i/o (92h) ................................ ................................ ... 53 7.2.33 read manufacturer / device id quad i/o (94h) ................................ ................................ . 54 7.2.34 read unique id number (4bh) ................................ ................................ .......................... 55 7.2.35 read jedec id (9fh) ................................ ................................ ................................ ........ 56 7.2.3 6 read sfdp register (5ah) ................................ ................................ ................................ 57
w25q16cv - 4 - 7.2.37 erase security registers (44h) ................................ ................................ ........................... 58 7.2.38 program security registers (42h) ................................ ................................ ...................... 59 7.2.39 read security registers (48h) ................................ ................................ ........................... 60 8. electrical character istics ................................ ................................ .............................. 61 8.1 a bsolute maximum ratings (1) (2) ................................ ................................ ................... 61 8.2 operating ranges ................................ ................................ ................................ .............. 61 8.3 power - up power - down timing and requirements ( 1 ) ................................ ....................... 62 8.4 ................................ ................................ ................................ ................................ ................... 62 8.5 dc electrical characteristics ................................ ................................ .............................. 63 8.6 ac measurement conditions ( 1 ) ................................ ................................ ......................... 64 8.7 ac electrical characteristics ................................ ................................ .............................. 65 8.8 ac electrical characteristics (contd) ................................ ................................ ................. 66 8.9 serial output timing ................................ ................................ ................................ ........... 67 8.10 serial input timing ................................ ................................ ................................ .............. 67 8.11 hold timing ................................ ................................ ................................ ...................... 67 8.12 wp timing ................................ ................................ ................................ .......................... 67 9. package specificatio n ................................ ................................ ................................ .......... 68 9.1 8 - pin soic 150 - mil (package code sn) ................................ ................................ ........... 68 9.2 8 - pin vsop 150 - mil (package code sv) ................................ ................................ .......... 69 9.3 8 - pin soic 208 - mil (package code ss) ................................ ................................ ........... 70 9.4 8 - pin vsop 208 - mil (package code st) ................................ ................................ .......... 71 9.5 8 - pin pdip 300 - mil (package code da) ................................ ................................ ............ 72 9.6 8 - pad wson 6x5mm ( package code zp) ................................ ................................ ........ 73 9.7 16 - pin soic 300 - mil (package code sf) ................................ ................................ .......... 75 9.8 24 - ball tfbga 8x6 - mm (package code tb, 5x5 - 1 ball array) ................................ ......... 76 9.9 24 - ball tfbga 8x6 - mm (package code tc, 6x4 ball array) ................................ ............ 77 10. ordering information ................................ ................................ ................................ .......... 78 10.1 valid part numbers and top side marking ................................ ................................ ........ 79 11. revision history ................................ ................................ ................................ ...................... 80
w25q16cv publication release date: october 03 , 201 3 - 5 - revision g 1. general description the w25q16cv ( 16m - bit) serial flash mem ory provide s a storage solution for systems with limited space, pins and power. the 25 q series offers flexibility and performance well beyond ordinary serial flash devices. they are ideal for code shadowing to ram, executing code directly from d ua l/quad sp i (xip ) and storing voice, text and data. the device operate s on a single 2.7 v to 3.6 v power supply with current consumption as low as 4 ma active and 1a for power - down. the w25q16cv array is organized into 8,192 programmable pages of 256 - bytes each. up t o 256 bytes can be programmed at a time. pag es can be erased in groups of 16 ( 4kb sector erase), groups of 128 (32kb block erase), groups of 256 ( 64kb block erase) or the entire chip (chip erase). the w25q16cv has 512 erasable sectors and 32 erasable block s respectively. the small 4kb sectors allow for greater flexibility in applications that require data and parameter storage. (see figure 2.) the w25q16cv supports the standard serial peripheral interface (spi), and a high performance d ual /quad output as w ell as dual/quad i/o spi: serial clock, chip select, serial data i/o 0 (di), i/o1 (do), i/o2 (/wp), and i/o3 (/hold) . spi clock frequencies of up to 104 mhz are supported allowing equivalent clock rates of 208mhz ( 104mhz x 2) for dual i/o and 416mhz ( 104mhz x 4) for quad i/o when using the fast read dual/quad i/o instructions. these transfer rates can outperform standard asynchronous 8 and 16 - bit parallel flash memories. the continuous read mode allows for efficient memory access with as few as 8 - clocks of in struction - overhead to read a 24 - bit address, allowing true xip ( execute in place) operation. a hold pin, write protect pin and programmable write protect ion , with top or bottom array control, provide further control flexibility. additionally, the device supports jedec standard manufacturer and device identification with a 64 - bit unique serial number . 2. features ? family of spiflash memories C w25q16cv : 16m - bit / 2 m - byte ( 2,097,152 ) C 256 - byte per programmable page C standard spi: clk, /cs, di, do, /wp, /hold C dual spi: clk, /cs, io 0 , io 1 , /wp, /hold C quad spi: clk, /cs, io 0 , io 1 , io 2 , io 3 ? highest performance serial flash C 104 mhz dual spi / quad spi clocks C 208 / 416mhz equivalent dual/quad spi C 52mb /s continuous data transfer rate C up to 8x that of ordina ry serial flash C more than 100,000 erase/program cycles ( 1 ) C more than 20 - year data retention ? efficient continuous read mode C low instruction overhead C continuous read with 8/16/32/64 - byte wrap C as few as 8 clocks to address memory C allows true xi p ( execute in place) operation C outperforms x16 parallel flash ? low power, wide temperature range C single 2.7 to 3.6 v supply C 4 ma active current, <1a power - down (typ.) C - 40c to + 85 c operating range ? flexible architecture with 4kb sectors C uniform secto r/block erase (4/32/64k - bytes ) C program one to 256 bytes C erase/program s uspend & resume ? advanced security & identification features C software and hardware write - protect C top/ bottom, 4kb complement array prot ection C power supply lock - down and otp prot ection C 64 - bit unique id for each device C d iscoverable parameter s (sfdp) register C 3x256 - byte security registers with otp lock s C volatile & non - volatile status register bits ? space efficient packaging ( 1 ) C 8 - pin soic /vsop 150/208 - mil C 8 - pad wson 6x5 - m m C 8 - pin pdip 300 - mil C 16 - pin soic 300 - mil C 24 - ball tfbga 8x6 - mm (6x4/5x5 ball array) C contact winbond for kgd and other option s note 1 . some package types are special orders , please contact winbond for ordering information .
w25q16cv - 6 - 3. package types and pi n conf igurations w25q16cv is offered in an 8 - pin soic 150 - mil or 208 - mil (package code sn & ss), an 8 - pin vsop 150 - mil or 208 - mil (package code sv & st), an 8 - pad wson 6x5 - mm (package code zp), an 8 - pin pdip 300 - mil (package code da), a 16 - pin soic 300 - mil (pack age code sf) and a 24 - ball 8x6 - mm tfbga ( 5x5 ball array - package code tb, 6x4 ball array C package code tc ) as shown in figure 1a - e respectively. package diagrams and dimensions are illustrated at the end of this datasheet. 3.1 pin configuration soic / vsop 1 50 / 208 - mil figure 1a . w25 q16cv pin assignme nts, 8 - pin soic / vsop 1 50 / 208 - mil (package code sn, ss , sv, st ) 3.2 pad configuration wson 6x5 - mm figure 1 b . w25q16cv pad assignments, 8 - pad wson 6x5 - mm (package code zp) 1 2 3 4 8 7 6 5 /cs do (io 1 ) /wp (io 2 ) gnd vcc /hold (io 3 ) di (io 0 ) clk top view 1 2 3 4 /cs do (io 1 ) /wp (io 2 ) gnd vcc /hold (io 3 ) di (io 0 ) clk top view 8 7 6 5
w25q16cv publication release date: october 03 , 201 3 - 7 - revision g 3.3 pin conf iguration pdip 300 - mil figure 1c. w25 q16cv pin assignments, 8 - pin pdip (package code da) 3.4 pin description soic / vsop 150/208 - mil, wson 6x5 - mm & pdip 300 - mil pin no. pin name i/o function 1 /cs i chip select input 2 do ( io1 ) i / o data output ( data input output 1)* 1 3 /wp ( io2 ) i /o write protect input ( data input output 2)* 2 4 gnd ground 5 di ( io0 ) i/o data i nput ( data input output 0)* 1 6 clk i serial clock input 7 /hold ( io3 ) i /o hold input ( data input output 3)* 2 8 vcc power supply *1 io0 and io1 are used for standard and dual spi instructions *2 io0 C io3 are used for quad spi instructions 1 2 3 4 8 7 6 5 /cs do (io 1 ) /wp (io 2 ) gnd vcc /hold (io 3 ) di (io 0 ) clk top view
w25q16cv - 8 - 3.5 pin configuration soic 300 - mil figure 1d. w25q16cv pin assignments, 16 - pin soic 300 - mil (package cod e sf) 3.6 pin description soic 300 - mil p in no. p in name i/o function 1 /hold ( io3 ) i /o hold input ( data input output 3)* 2 2 vcc power supply 3 n/c no connect 4 n/c no connect 5 n/c no connect 6 n/c no connect 7 /cs i chip select input 8 do (io1) i / o data out put (data input output 1)* 1 9 /wp ( io2 ) i /o write protect input ( data input output 2)* 2 10 gnd ground 11 n/c no connect 12 n/c no connect 13 n/c no connect 14 n/c no connect 15 di ( io0 ) i /o data input (data input output 0)* 1 16 clk i serial clock input *1 io0 and io1 are used for standard and dual spi instructions *2 io0 C io3 are used for quad spi instructions 1 2 3 4 /cs do (io 1 ) /wp (io 2 ) gnd vcc /hold (io 3 ) di (io 0 ) clk top view nc nc nc nc nc nc nc nc 5 6 7 8 10 9 11 12 13 14 15 16
w25q16cv publication release date: october 03 , 201 3 - 9 - revision g 3.7 ball configuration tfbga 8x6 - mm figure 1 e . w25q16c v ball assignments, 24 - ball tfbga 8x6 - mm (pa ckage code tb or tc ) 3.8 ball description tfbga 8x6 - mm ball no. p in name i/o function b2 clk i serial clock input b3 gnd ground b4 vcc power supply c2 /cs i chip select input c4 /wp ( io2 ) i /o write protect input ( data input output 2)* 2 d2 do (io1) i/ o data out put (data input output 1)* 1 d3 di ( io0 ) i /o data input (data input output 0)* 1 d4 /hold ( io3 ) i /o hold input ( data input output 3)* 2 multiple nc no connect *1 io0 and io1 are used for standard and dual spi instructions *2 io0 C io3 are used fo r quad spi instructions d 1 / h o l d ( i o 3 ) d i ( i o 0 ) d o ( i o 1 ) / w p ( i o 2 ) d 2 d 3 d 4 n c e 1 n c n c n c e 2 e 3 e 4 n c f 1 n c n c n c f 2 f 3 f 4 n c a 1 n c n c n c a 2 a 3 a 4 n c b 1 v c c g n d c l k b 2 b 3 b 4 n c c 1 n c / c s c 2 c 3 c 4 n c t o p v i e w p a c k a g e c o d e t c d 1 / h o l d ( i o 3 ) d i ( i o 0 ) d o ( i o 1 ) / w p ( i o 2 ) d 2 d 3 d 4 n c e 1 n c n c n c e 2 e 3 e 4 n c b 5 n c n c n c a 2 a 3 a 4 n c b 1 v c c g n d c l k b 2 b 3 b 4 n c c 1 n c / c s c 2 c 3 c 4 n c t o p v i e w p a c k a g e c o d e t b c 5 n c d 5 n c e 5 n c a 5 n c
w25q16cv - 10 - 4. pin descriptions 4.1 chip select ( /cs ) the spi chip select ( /cs ) pin enables and disables device operation. when /cs is high the device is deselected and the serial data output ( do, or io0, io1, io2, i o3 ) pin s are at high impedance. wh en deselected, the devices power consumption will be at standby levels unless an internal erase, program or write status register cycle is in progress. when /cs is brought low the device will be selected, power consumption will increase to active levels an d instructions can be written to and data read from the device. after power - up, /cs must transition from high to low before a new instruction will be accepted. the /cs input must track the vcc supply level at power - up and power - down (see write protection and figure 3 8 ). if needed a pull - up resister on /cs can be used to accomplish this. 4.2 serial data input, output and ios (d i , d o and io0, io1, io2, io3) the w25q16cv support s standard spi, dual spi and quad spi operation. standard spi instructions use the u nidirectional d i (input) pin to serially write instructions, addresses or data to the device on the rising edge of the serial clock (clk) input pin. standard spi also uses the unidirectional do (output) to read data or status from the device on the falling edge of clk. dual and quad spi instruction s use the bidirectional io pins to serially write instructions, addresses or data to the device on the rising edge of clk and read data or status from the device on the falling edge of clk. quad spi instructions require the non - volatile quad enable bit (qe) in status register - 2 to be set. when qe=1 , the /wp pin becomes i o 2 and /hold pin becomes io3. 4.3 write protect ( /wp ) the write protect ( /wp ) pin can be used to prevent the status register from being written. use d in conjunction with the status registers block protect ( cmp, sec , tb, bp2, bp1 and bp0 ) bits and status register protect (srp) bits, a portion as small as a 4kb sector or the entire memory array can be hardware protected. the /wp pin is active low. when the qe bit of status register - 2 is set for q uad i/ o, the /wp pin function is not available since this pin is used for i o 2 . see figure 1a - e for the pin c onfiguration of quad i/o operation . 4.4 h old ( /hold ) the /hold pin allows the device to be paused while it is actively selected. when /hold is brought low, while /cs is low, the do pin will be at high impedance and signals on the di and clk pins will be ignored (dont care). when /hold is brought high, device operation can resume. the /hold function can be usef ul when multiple devices are sharing the same spi signals. the /hold pin is active low. when the qe bit of status register - 2 is set for quad i/o, the /hold pin function is not available since this pin is used for io3. see figure 1a - e for the pin configurat ion of quad i/o operation. 4.5 serial clock (clk) the spi serial clock input (clk) pin provides the timing for serial input an d output operations. ("see spi operations")
w25q16cv publication release date: october 03 , 201 3 - 11 - revision g 5. block diagram figure 2 . w25q16cv serial fla sh memory block diagram 003000h 0030ffh 002000h 0020ffh 001000h 0010ffh column decode and 256 - byte page buffer beginning page address ending page address w25q16cv spi command & control logic byte address latch / counter status register write control logic page address latch / counter do (io 1 ) di (io 0 ) /cs clk /hold (io 3 ) /wp (io 2 ) high voltage generators xx0f00h xx0fffh ? sector 0 (4kb) ? xx0000h xx00ffh xx1f00h xx1fffh ? sector 1 (4kb) ? xx1000h xx10ffh xx2f00h xx2fffh ? sector 2 (4kb) ? xx2000h xx20ffh ? ? ? xxdf00h xxdfffh ? sector 13 (4kb) ? xxd000h xxd0ffh xxef00h xxefffh ? sector 14 (4kb) ? xxe000h xxe0ffh xxff00h xxffffh ? sector 15 (4kb) ? xxf000h xxf0ffh block segmentation data security register 1 - 3 write protect logic and row decode 00ff00h 00ffffh ? block 0 (64kb) ? 000000h 0000ffh ? ? ? 07ff00h 07ffffh ? block 7 (64kb) ? 070000h 0700ffh 08ff00h 08ffffh ? block 8 (64kb) ? 080000h 0800ffh ? ? ? 0fff00h 0fffffh ? block 15 (64kb) ? 0f0000h 0f00ffh 10ff00h 10ffffh ? block 16 (64kb) ? 100000h 1000ffh ? ? ? 1fff00h 1fffffh ? block 31 (64kb) ? 1f0000h 1f00ffh 000000h 0000ffh sfdp register 003000h 0030ffh 002000h 0020ffh 001000h 0010ffh column decode and 256 - byte page buffer beginning page address ending page address w25q16cv spi command & control logic byte address latch / counter status register write control logic page address latch / counter do (io 1 ) di (io 0 ) /cs clk /hold (io 3 ) /wp (io 2 ) high voltage generators xx0f00h xx0fffh ? sector 0 (4kb) ? xx0000h xx00ffh xx1f00h xx1fffh ? sector 1 (4kb) ? xx1000h xx10ffh xx2f00h xx2fffh ? sector 2 (4kb) ? xx2000h xx20ffh ? ? ? xxdf00h xxdfffh ? sector 13 (4kb) ? xxd000h xxd0ffh xxef00h xxefffh ? sector 14 (4kb) ? xxe000h xxe0ffh xxff00h xxffffh ? sector 15 (4kb) ? xxf000h xxf0ffh block segmentation data security register 1 - 3 write protect logic and row decode 00ff00h 00ffffh ? block 0 (64kb) ? 000000h 0000ffh ? ? ? 07ff00h 07ffffh ? block 7 (64kb) ? 070000h 0700ffh 08ff00h 08ffffh ? block 8 (64kb) ? 080000h 0800ffh ? ? ? 0fff00h 0fffffh ? block 15 (64kb) ? 0f0000h 0f00ffh 10ff00h 10ffffh ? block 16 (64kb) ? 100000h 1000ffh ? ? ? 1fff00h 1fffffh ? block 31 (64kb) ? 1f0000h 1f00ffh 000000h 0000ffh sfdp register
w25q16cv - 12 - 6. functional descripti on 6.1 spi operations 6.1.1 standard spi instructions the w25q16cv is accessed through an spi compatible bus consisting of four signals: serial clock (clk), chip select ( /cs ), serial data input ( di ) and serial data output (do). standard spi instructions use the di input pin to serially write instructions, addresses or data to the device on the rising edge of clk . the do output pin is used to read data or status from the device on the falling edge clk. spi bus operation mo de 0 (0,0) and 3 (1,1) are supported. the primary difference between mode 0 and mode 3 concerns the normal state of the clk signal when the spi bus master is in standby and data is not being transferred to the serial flash. for mode 0 , the clk signal is no rmally low on the falling and rising edges of /cs. for mode 3 , the clk signal is normally high on the falling and rising edges of /cs . 6.1.2 dual spi instructions the w25q16cv support s dual spi operation when using the fast read dual output (3bh) and fast r ead dual i/o (bbh) instruction s . th ese instructions allow data to be transferred to or from the device at two to three times the rate of ordinary serial flash devices. the dual spi read i nstruction s are ideal for quickly downloading code to ram upon power - up (code - shadowing) or for execut ing non - speed - critical code directly from the spi bus (xip) . when using dual spi instructions , the di and do pins become bidirectional i/ o pins: io0 and io1. 6.1.3 quad spi instructions the w25q16cv supports quad spi operation w he n using the fast read quad output (6bh) , fast read quad i/o (ebh) , word read quad i/o (e7h) and octal word read quad i/o (e3h) instructions . these instructions allow data to be transferred to or from the device four to six times the rate of ordin ary serial flash. the quad read instructions offer a significant improvement in continuous and random access transfer rates allowing fast code - shadowing to ram or execut ion directly from the spi bus (xip) . when using quad spi instructions the di and do pin s become bidirectional io0 and io1 , and the /wp and /hold pins become io2 and io3 respectively. quad spi instructions require the non - volatile quad enable bit (qe) in status register - 2 to be set . 6.1.4 hold function for standard spi and dual spi operations, t he /hold signal allows the w25q16cv operation to be paused while it is actively selected (when /cs is low). the /hold function may be useful in cases where the spi data and clock signals are shared with other devices. for example, consider if the page buffer was only partially written when a priority interrupt requires use of the spi bus. in this case the /hold function can save the state of the instruction and the data in the buffer so programming can resume where it left off once the bus is available again. the /hold function is only available for standard spi and dual spi operation, not during quad spi. to initiate a /hold condition, the device must be selected with /cs low. a /hold condition will activate on the falling edge of the /hold signal if the clk s ignal is already low. if the clk is not already low the /hold condition will activate after the next falling edge of clk. the /hold condition will terminate on the rising edge of the /hold signal if the clk signal is already low. if the clk is not already low the /hold
w25q16cv publication release date: october 03 , 201 3 - 13 - revision g condition will terminate after the next falling edge of clk. during a /hold condition, the serial data output (do) is high impedance, a nd serial data input (di ) and serial clock (clk) are ignored. the chip select ( /cs ) signal should be kept a ctive (low) for the full duration of the /hold operation to avoid resetting the internal logic state of the device. 6.2 write protection applications that use non - volatile memory must take into consideration the possibility of noise and other adverse system co nditions that may compromise data integrity. to address this concern , the w25q16cv provides several means to protect the data from inadvertent writes. 6.2.1 write protect features ? device resets when vcc is below threshold ? time delay write disable after power - up ? write enable/disable instructions and a ut omatic write disable after e rase or program ? software and hardware (/wp pin) write protection using status register ? write protection using power - down instruction ? lock down write protection until next power - up ? one time program (otp) write protection * * note : this feature is available upon special order. please contact winbond for details. upon power - up or at power - down , the w25q16cv will maintain a reset condition while vcc is below the threshold value of v wi , (se e power - up timing and voltage levels and figure 3 8 ). while reset, all operations are disabled and no instructions are recognized. during power - up and after the vcc voltage exceeds v wi , all program and erase related instructions are further disabled for a t ime delay of t puw . this includes the write enable, page program, sector erase, block erase, chip erase and the write status register instructions. note that the chip select pin ( /cs ) must track the vcc supply level at power - up until the vcc - min level and t vsl time delay is reached , and it must also track the vcc supply level at power - down to prevent adverse command sequence . if needed a pull - up resister on /cs can be used to accomplish this. after power - up the device is automatically placed in a write - disa bled state with the status register write enable latch (wel) set to a 0. a write enable instruction must be issued before a page program, sector erase, block erase, chip erase or write status register instruction will be accepted. after completing a progra m, erase or write instruction the write enable latch (wel) is automatically cleared to a write - disabled state of 0. software controlled write protection is facilitated using the write status register instruction and setting the status register protect (srp 0, srp1 ) and block protect ( cmp, sec, tb, bp2, bp1 and bp0 ) bits. these settings allow a portion as small as 4kb sector or the entire memory array to be configured as read only. used in conjunction with the write protect ( /wp ) pin, changes to the status reg ister can be enabled or disabled under hardware control. see status register section for further information. additionally, the power - down instruction offers an extra level of write protection as all instructions are ignored except for the release power - do wn instruction.
w25q16cv - 14 - 7. status register s and instructions the read status register - 1 and status register - 2 instruction s can be used to provide status on the availability of the flash memory array, if the device is write enabled or disabled, t he state of write pro tection , quad spi s e tting , security register lock status and erase/program suspend status . the write status register instruction can be used to configure the device write protection features , quad spi sett i ng and security register otp lock . write access to the status register is controlled by the state of the non - volatile s tatus register protect bits (srp 0, srp1 ) , the write enable instruction, and during standard/dual spi operations, the /wp pin . 7.1 status register s 7.1.1 busy status (busy) busy is a read only bit in the status register (s0) that is set to a 1 state when the device is executing a page program, quad page program, sector erase, block erase, chip erase, write status register or erase/program security register instruction. during this time the device wi ll ignore further instructions except for the read status register and erase /program suspend instruction (see t w , t pp , t se , t b e , and t c e in ac characteristics). when the program, erase or write status /security register instruction has completed, the busy b it will be cleared to a 0 state indicating the device is ready for further instructions. 7.1.2 write enable latch status (wel) write enable latch (wel) is a read only bit in the statu s register (s1) that is set to 1 after executing a write enable instruction. t h e wel status bit is cleared to 0 when the device is write disabled. a write disable state occurs upon power - up or after any of the following instructions: write disable, page program, quad page program, sector erase, block erase, chip erase, write status register , erase security register and program security register . 7.1.3 block protect bits (bp2, bp1, bp0) the block protect bits (bp2, bp1, bp0 ) are non - volatile read/write bits in the status register (s4, s3, and s2 ) that provide write protection control and st atus. block protect bits can be set using the write status register instruction (see t w in ac characteristics). all, none or a portion of the memory array can be protected from program and erase instructions (see status register memory protection table). t he factory default setting for the block protection bits is 0, none of the array protected. 7.1.4 top/bottom block protect bit (tb) the non - volatile top/bottom bit (tb) controls if the block protect bits (bp2, bp1, bp0) protect from the top (tb=0) or the bottom (tb=1) of the array as shown in the status register memory protection table. the f actory default setting is tb=0. the tb bit can be set with the write status register instruction depending on the state of the srp0, srp1 and wel bits. 7.1.5 sector /block protect bit (sec) the non - volatile sector /block p rotect bit (sec) controls if the block protect bits (bp2, bp1, bp0) protect either 4kb sectors (sec=1) or 64kb blocks (sec=0) in the top (tb=0) or the bottom (tb=1) of the array as shown in the status register mem ory protection table. the default setting is sec =0.
w25q16cv publication release date: october 03 , 201 3 - 15 - revision g 7.1.6 complement protect bit (cmp) the c omplement p rotect bit (cmp) is a non - volatile read/write bit in the status register (s14). it is used in conjunction with sec, tb, bp2, bp1 and bp0 bits to provide more flexibility for the array protection. once cmp is set to 1, previous array protection set by sec, tb, bp2, bp1 and bp0 will be reversed. for instance, when cmp=0, a top 4kb sector can be protected while the rest of the array is not; when cmp=1, the top 4kb sector will become unprotected while the rest of the array become read - only. please refer to the status register memory protection table for details. the default setting is cmp =0. 7.1.7 status register protect bits (srp 1 , srp 0 ) the status register protect bits (srp 1 and srp0 ) are non - volatile read/write bits in the status register (s8 and s7). the srp bits control the method of write protection: s oftware p rotection, h ardware p rotection, p ower s upply l ock - d own or o ne t ime p rogrammable (otp) p rotection. srp1 srp0 /wp status register description 0 0 x software protection /wp pin has no control. the status register can be written to after a write enable instruction , wel=1 . [factory default] 0 1 0 hardware protect ed when /wp pin is low the status register locked a nd can not be written to . 0 1 1 hardware unprotected when /wp pin is high the status register is unlocked and can be written to after a write enable instruction , wel=1. 1 0 x power supply lock - down status register is protected and can not be written to again until the next power - down , power - up cycle . ( 1 ) 1 1 x one time program ( 2 ) status register is permanently protected and can not be written to. note s : 1. when srp1, srp0 = (1, 0), a power - down, power - up cycle will change srp1, srp0 to (0, 0) state. 2 . this feature is available upon special order. please contact winbond for details. 7.1.8 erase/program suspend status (sus) the suspend status bit is a read only bit in the status register (s15) that is set to 1 after executing a erase/program suspend (75h) i nstruction. the sus status bit is cleared to 0 by erase/program resume (7ah) instr uction as well as a power - down, power - up cycle. 7.1.9 security register lock bits (lb3, lb2, lb1 ) the security register lock bits (lb3, lb2, lb1) are non - volatile one time program (otp) bits in status register (s13, s12, s11) that provide the write protect control and status to the security registers . the default state of lb [ 3 :1] is 0, security registers are unlocked. lb [3:1] can be set to 1 individually using the write status regis ter instruction. lb [3:1] are one time programmable (otp), once its set to 1, the corresponding 256 - byte security register will become read - only permanently.
w25q16cv - 16 - 7.1.10 quad enable bit ( qe ) the quad enable (qe ) bit is a non - volatile read/write bit in the status regis ter (s 9 ) that allow s quad spi operation . when the qe bit is set to a 0 state (factory default) , the /wp pin and /h old are enabled . when the qe bit is set to a 1 , the quad io2 and i o3 pins are enabled , and /wp and /hold functions are disabled . warning: if t he /wp or /hold pins are tied directly to the power supply or ground during standard spi or dual spi operation, the qe bit should never be set to a 1 . figure 3 a . status register - 1 figure 3 b . status register - 2 s7 s6 s5 s4 s3 s2 s1 s0 srp0 sec tb bp2 bp1 bp0 wel busy status register protect 0 (non - volatile) sector protect (non - volatile) top/bottom protect (non - volatile) block protect bits (non - volatile) write enable latch erase/write in progress s7 s6 s5 s4 s3 s2 s1 s0 srp0 sec tb bp2 bp1 bp0 wel busy status register protect 0 (non - volatile) sector protect (non - volatile) top/bottom protect (non - volatile) block protect bits (non - volatile) write enable latch erase/write in progress s15 s14 s13 s12 s11 s10 s9 s8 sus cmp lb3 lb2 lb1 (r) qe srp1 suspend status complement protect (non - volatile) security register lock bits (non - volatile otp) quad enable (non - volatile) status register protect 1 (non - volatile) reserved s15 s14 s13 s12 s11 s10 s9 s8 sus cmp lb3 lb2 lb1 (r) qe srp1 suspend status complement protect (non - volatile) security register lock bits (non - volatile otp) quad enable (non - volatile) status register protect 1 (non - volatile) reserved
w25q16cv publication release date: october 03 , 201 3 - 17 - revision g 7.1.11 status r egister memory protection (cmp = 0) status register (1) w25q16cv ( 16m - bit) memory protecti on (3) sec tb bp2 bp1 bp0 protected block(s) protected addresses protected density protected portion (2) x x 0 0 0 none none none none 0 0 0 0 1 31 1 f0000h C 1 fffffh 64kb upper 1/32 0 0 0 1 0 30 and 31 1 e0000h C 1 fffffh 128kb upper 1/16 0 0 0 1 1 28 thru 31 1 c0000h C 1 fffffh 256kb upper 1/8 0 0 1 0 0 24 thru 31 1 80000h C 1 fffffh 512kb upper 1/4 0 0 1 0 1 16 thru 31 1 00000h C 1 fffffh 1mb upper 1/2 0 1 0 0 1 0 0000 00h C 00ffffh 64kb lower 1/32 0 1 0 1 0 0 and 1 000000h C 01ffffh 128kb lower 1/16 0 1 0 1 1 0 thru 3 000000h C 03ffffh 256kb lower 1/8 0 1 1 0 0 0 thru 7 000000h C 07ffffh 512kb lower 1/4 0 1 1 0 1 0 thru 15 000000h C 0fffffh 1mb lower 1/2 x x 1 1 x 0 thru 31 000000h C 1f ffffh 2mb all 1 0 0 0 1 31 1ff000 h C 1f ffffh 4kb u C 1/512 1 0 0 1 0 31 1fe000 h C 1f ffffh 8kb u C 1/ 256 1 0 0 1 1 31 1fc000 h C 1f ffffh 16kb u C 1/ 128 1 0 1 0 x 31 1f8000 h C 1f ffffh 32kb u C 1/ 64 1 1 0 0 1 0 000000h C 000fffh 4kb l C 1/512 1 1 0 1 0 0 000000h C 001fffh 8kb l C 1/ 256 1 1 0 1 1 0 000000h C 003fffh 16kb l C 1/ 128 1 1 1 0 x 0 000000h C 007fffh 32kb l C 1/ 64 note s : 1. x = dont care 2. l = lower; u = upper 3. if any erase or program command specifies a memory region that c ontains protected data portion, this command will be ignored.
w25q16cv - 18 - 7.1.12 status register memory protection (cmp = 1) status register (1) w25q16cv (16m - bit) memory protecti on (3) sec tb bp2 bp1 bp0 protected block(s) protected addresses protected density protected po rtion (2) x x 0 0 0 0 thru 31 00 0000h C 1 fffffh all all 0 0 0 0 1 0 thru 30 00 0000h C 1 effffh 1,984 kb lower 31/32 0 0 0 1 0 0 thru 29 00 0000h C 1 dffffh 1,920 kb lower 15/16 0 0 0 1 1 0 thru 27 00 0000h C 1 bffffh 1,792 kb lower 7/8 0 0 1 0 0 0 thru 23 00 00 00h C 1 7ffffh 1,536 kb lower 3/4 0 0 1 0 1 0 thru 15 0 00000h C 0 fffffh 1mb lower 1/2 0 1 0 0 1 1 thru 31 010000h C 1fffffh 1,984kb upper 31/32 0 1 0 1 0 2 and 31 020000h C 1fffffh 1,920kb upper 15/16 0 1 0 1 1 4 thru 31 040000h C 1fffffh 1,792kb upper 7 /8 0 1 1 0 0 8 thru 31 080000h C 1fffffh 1,536kb upper 3/4 0 1 1 0 1 16 thru 31 100000h C 1fffffh 1mb upper 1/2 x x 1 1 x none none none none 1 0 0 0 1 0 thru 31 000 000 h C 1f efffh 2,04 4kb l C 511/512 1 0 0 1 0 0 thru 31 000 000 h C 1f dfffh 2,040 kb l C 2 55/256 1 0 0 1 1 0 thru 31 000 000 h C 1f bfffh 2,032 kb l C 127/128 1 0 1 0 x 0 thru 31 000 000 h C 1f 7fffh 2,016 kb l C 63/64 1 1 0 0 1 0 thru 31 00 1 000h C 1ff fffh 2,04 4kb u C 511/512 1 1 0 1 0 0 thru 31 00 2 000h C 1ff fffh 2,040 kb u C 255/256 1 1 0 1 1 0 thru 31 00 4 000h C 1ff fffh 2,032 kb u C 127/128 1 1 1 0 x 0 thru 31 00 8 000h C 1ff fffh 2,016 kb u C 63/64 note s : 1. x = dont care 2. l = lower; u = upper 3. if any erase or program command specifies a memory region that contains protected data portion, this comman d will be ignored.
w25q16cv publication release date: october 03 , 201 3 - 19 - revision g 7.2 instructions the instruction set of the w25q16cv consists of thirty five basic instructions that are fully controlled through the spi bus (see instruction set table 1 - 3 ). instructions are initiated with the falling edge of chip select ( /cs) . the first byte of data clo cked into the di input provides the i nstruction code. data on the di input is sampled on the rising edge of clock with most significant bit (msb) first. instructions vary in length from a single byte to several bytes and ma y be followed by address bytes, data bytes, dummy bytes (dont care), and in some cases, a combination. instructions are completed with the rising edge of edge /cs . clock relative timing diagrams for each instruction are included in figures 4 through 3 7 . a ll read instructions can be completed after any clocked bit. however, all instructions that write, program or erase must complete on a byte boundary ( / cs driven high after a full 8 - bits have been clocked) otherwise the instruction will be ignor ed. this fea ture further protects the device from inadvertent writes. additionally, while the memory is being programmed or erased, or when the status register is being written, all instructions except for read status register will be ignored until the program or eras e cycle has completed. 7.2.1 manufacturer and device identification manufacturer id (m f 7 - m f 0) winbond serial flash ef h device id (id7 - id0) (id15 - id0) instruction abh, 90h 9fh w25q16cv 1 4 h 4 01 5 h
w25q16cv - 20 - 7.2.2 instruction set table 1 (erase, program instructions) ( 1 ) instruction name byte 1 ( code ) byte 2 byte 3 byte 4 byte 5 byte 6 write enable 06h write enable for volatile status register 50h write disable 04h read status register - 1 05h (s7 C s0) ( 2 ) read status register - 2 35h (s 15 - s 8 ) ( 2 ) write status re gister 01h ( s7 C s0 ) (s 15 - s8) page program 02h a23 C a16 a15 C a8 a7 C a0 (d7 C d0) quad page program 3 2h a23 C a16 a15 C a8 a7 C a0 (d7 C d0 , ) (3) sector erase (4kb) 20 h a23 C a16 a15 C a8 a7 C a0 block erase (32kb) 52h a23 C a16 a15 C a8 a7 C a0 block erase ( 6 4kb) d8 h a2 3 C a16 a15 C a8 a7 C a0 chip erase c7h /60h erase / program suspend 75h erase / program resume 7ah power - down b9h continuous read mode reset (4) ffh ffh notes: 1. data bytes are shifted with most significant bit first. byte fields with data in parent hesis () indicate data being read from the device on the do pin. 2. the status register contents will repeat continuously until /cs terminates the instruction. 3. quad page program input data : io0 = (d4, d0, ) io1 = (d5, d1, ) io2 = (d6, d2, ) io3 = (d7, d3, ) 4. this instruction is recommended w hen using the dual or quad continuous read mode feature. see section 7. 2. 1 9 & 7. 2. 20 for more information.
w25q16cv publication release date: october 03 , 201 3 - 21 - revision g 7.2.3 instruction set table 2 ( read instructions) instruction name byte 1 ( co de ) byte 2 byte 3 byte 4 byte 5 byte 6 read data 03h a23 - a16 a15 - a8 a7 - a0 (d7 - d0) fast read 0bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0) fast read dual output 3bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0 , ) (1) fast read quad output 6bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0 , ) (3) fast read dual i/o bbh a23 - a 8 (2) a7 - a0, m7 - m0 (2) (d7 - d0 , ) (1) fast read quad i/o ebh a23 - a0, m7 - m0 (4) ( x,x,x,x, d7 - d0 , ) (5) (d7 - d0, ) (3) word read quad i/o (7) e7h a23 - a0, m7 - m0 (4) ( x,x, d7 - d0 , ) (6) (d7 - d0, ) (3) octal word read qu ad i/o (8) e3h a23 - a0, m7 - m0 (4) (d7 - d0, ) (3) set burst with wrap 77h xxxxxx, w6 - w4 (4) notes : 1 . dual output data io0 = (d6, d4, d2, d0) io1 = (d7, d5, d3, d1) 2 . dual input address io0 = a22, a20, a18, a16, a14, a12, a10, a8 a6, a4, a2, a0, m6, m4, m2, m0 io1 = a23, a21, a19, a17, a15, a13, a11, a9 a7, a5, a3, a1, m7, m5, m3, m1 3. quad output data io0 = (d4, d0, ..) io1 = (d5, d1, ..) io2 = (d6, d2, ..) io3 = (d7, d3, ..) 4. quad input address set burst with wra p input io0 = a20, a16, a12, a8, a4, a0, m4, m0 io0 = x, x, x, x, x, x, w4, x io1 = a21, a17, a13, a9, a5, a1, m5, m1 io1 = x, x, x, x, x, x, w5, x io2 = a22, a18, a14, a10, a6, a2, m6, m2 io2 = x, x, x, x, x, x, w6, x io3 = a23, a19, a15, a11, a7, a3, m7, m3 io3 = x, x, x, x, x, x, x, x 5 . fast read quad i/o data io0 = (x, x, x, x, d4, d0, ..) io1 = (x, x, x, x, d5, d1, ..) io2 = (x, x, x, x, d6, d2, ..) io3 = (x, x, x, x, d7, d3, ..) 6. word read quad i/o data io0 = (x , x, d4, d0, ..) io1 = (x, x, d5, d1, ..) io2 = (x, x, d6, d2, ..) io3 = (x, x, d7, d3, ..) 7. the lowest address bit must be 0. ( a0 = 0 ) 8. the lowest 4 address bits must be 0. ( a0, a1, a2, a3 = 0 )
w25q16cv - 22 - 7.2.4 instruction set table 3 (id, security instruct ions) instruction name byte 1 ( code ) byte 2 byte 3 byte 4 byte 5 byte 6 release power down / device id abh dummy dummy dummy (id7 - id0) ( 1 ) manufacturer/ device id ( 2 ) 90h dummy dummy 00h (m f 7 - m f 0) (id7 - id0) manufacturer/device id by dual i/o 92h a23 - a8 a7 - a0, m[7:0] (mf[7:0], id[7:0]) manufacture/device id by quad i/o 94h a23 - a0, m[7:0] xxxx, (mf[7:0], id[7:0]) (mf[7:0], id[7:0], ) jedec id 9fh (m f 7 - m f 0) manufacturer (id15 - id8) memory type (id7 - id0) capacity read unique id 4bh dummy dummy dummy d ummy (id63 - id0) read sfdp register 5ah 00h 00h a7 C a0 dummy (d7 - 0) erase security registers (3) 44h a23 C a16 a15 C a8 a7 C a0 program security registers (3) 42h a23 C a16 a15 C a8 a7 C a0 (d7 - 0) (d7 - 0) read security registers (3) 48h a23 C a16 a15 C a8 a7 C a0 dummy ( d7 - 0) notes: 1. the device id will repeat continuously until /cs terminates the instruction. 2. see manufacturer and device identification table for device id information. 3. security register address: security register 1 : a23 - 16 = 00h ; a15 - 8 = 10h ; a7 - 0 = by te address security register 2 : a23 - 16 = 00h ; a15 - 8 = 20h ; a7 - 0 = byte address security register 3 : a23 - 16 = 00h ; a15 - 8 = 30h ; a7 - 0 = byte address
w25q16cv publication release date: october 03 , 201 3 - 23 - revision g 7.2.5 write enable (06h) the write enable instruction (figure 4) sets the write enable latch (wel) bit in t he status register to a 1. the wel bit must be set prior to every page program, quad page program, sector erase, block erase, chip erase, write status register and erase/program security registers instruction. the write enable instruction is entered by dri ving /cs low, shifting the instruction code 06h into the data input (di) pin on the rising edge of clk, and then driving /cs high. figure 4. write enable instruction sequence diagram 7.2.6 write enable for volatile status register (50h) the non - volatile status register bits described in section 7 .1 can also be written to as volatile bits. this gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non - volatile bit write cycles or affecting the endurance of the status register non - volatile bits. to write the volatile values into the status register bits, the write enable for volatile status register (50h) instruction must be issued prior to a write status registe r (01h) instruction. write enable for volatile status register instruction (figure 5) will not set the write enable latch (wel) bit, it is only valid for the write status register instruction to change the volatile status register bit values. figure 5. write enable for volatile status register instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 mode 0 mode 3 instruction (06h) high impedance /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 mode 0 mode 3 instruction (50h) high impedance
w25q16cv - 24 - 7.2.7 write disable (04h) the write disable instruction (figure 6) resets the write enable latch (wel) bit in the status register to a 0. the write disable instruct ion is entered by driving /cs low, shifting the instruction code 04h into the di pin and then driving /cs high. note that the wel bit is automatically reset after power - up and upon completion of the write status register, erase/program security registers , page program, quad page program, sector erase, block erase and chip erase instructions. write disable instruction can also be used to invalidate the write enable for volatile status register instruction. figure 6. write disab le instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 mode 0 mode 3 instruction (04h) high impedance
w25q16cv publication release date: october 03 , 201 3 - 25 - revision g 7.2.8 read status register - 1 (05h) and read status register - 2 ( 3 5h) the read status register instructions allow the 8 - bit status registers to be read. the instruction is entered by driving /cs low and shifting the instruction cod e 05h for status r egister - 1 or 35h for status r egister - 2 into the di pin on the rising edge of clk. the status register bits are then shifted out on the do pin at the falling edge of clk with most significant bit (msb) first as shown in figure 7. the s tatus register bits are shown in figure 3a and 3b and include the busy, wel, bp2 - bp0, tb, sec, srp0, srp1, qe , lb[3:1] , cmp and sus bits (see status register section earlier in this datasheet). the read status register instruction may be used at any time, even while a program, erase or write status register cycle is in progress. this allows the busy status bit to be checked to determine when the cycle is complete and if the device can accept another instruction. the status register can be read continuously , as shown in figure 7. the instruction is completed by driving /cs high. figure 7. read status register instruction sequence diagram 7.2.9 write status register (01h) the write status register instruction allows the status register to be written. only non - vo latile status register bits srp0, sec, tb, bp2, bp1, bp0 (bits 7 thru 2 of status registe r - 1) and cmp, lb3, lb2, lb1 , qe, srp1 (bits 14 thru 8 of status register - 2) can be written to. all other status register bit locations are read - only and will not be af fected by the write s tatus register instruction. lb[3:1] are non - volatile otp bits, once it is set to 1, it can not be cleared to 0. the status register bits are shown in figure 3 and described in 7 .1. to write non - volatile status register bits, a standard write enable (06h) instruction must previously have been executed for the device to accept the write status register instruction (status register bit wel must equal 1). once write enabled, the instruction is entered by driving /cs low, sending the instruc tion code 01h, and then writing the status register data byte as illustrated in figure 8. to write volatile status register bits, a write enable for volatile status register (50h) instruction must have been executed prior to the write status register ins truction (status register bit wel remains 0). howe ver, srp1 and lb3, lb2, lb1 can not be changed from 1 to 0 because of the otp protection for these bits. upon power off, the volatile status register bit values will be lost, and the non - volatile status register bit values will be restored when power on again. /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (05h or 35h) high impedance 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 status register 1 or 2 out status register 1 or 2 out * * = msb *
w25q16cv - 26 - to complete the write status register instruction, the /cs pin must be driven high after the eighth or sixteenth bit of data that is clocked in. if this is not done the write status register instr uction will not be executed. if /cs is driven high after the eighth clock (compatible with the 25x series) the cmp and qe bits will be cleared to 0. during non - volatile status register write operation (06h combined with 01h), after /cs is driven high, the self - timed write status register cycle will commence for a time duration of t w (see ac characteristics). while the write status register cycle is in progress, the read status register instruction may still be accessed to check the status of the busy bit. t he busy bit is a 1 during the write status register cycle and a 0 when the cycle is finished and ready to accept other instructions again. after the write status register cycle has finished, the write enable latch (wel) bit in the status register will be c leared to 0. during volatile status register write operation (50h combined with 01h), after /cs is driven high, the status register bits will be refreshed to the new values within the time period of t shsl2 (see ac characteristics). busy bit will remain 0 d uring the status register bit refresh period. please refer to 7 .1 for detailed status register bit descriptions. factory default for all status register bits are 0. figure 8. write status register instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (01h) high impedance 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8 status register 1 in status register 2 in mode 0 mode 3 * * = msb *
w25q16cv publication release date: october 03 , 201 3 - 27 - revision g 7.2.10 read data (03h) the read data instruction allows one or more data bytes to be sequentially read from the memory. the instruction is initiated by driving the /cs pin low and then shifting the instruction code 03h followed by a 24 - bit address (a23 - a0) int o the di pin. the code and address bits are latched on the rising edge of the clk pin. after the address is received, the data byte of the addressed memory location will be shifted out on the do pin at the falling edge of clk with most significant bit (msb ) first. the address is automatically incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. this means that the entire memory can be accessed with a single instruction as long as the clock c ontinues. the instruction is completed by driving /cs high. the read data instruction sequence is shown in figure 9. if a read data instruction is issued while an erase, program or write cycle is in process (busy=1) the instruction is ignored and will not have any effects on the current cycle. the read data instruction allows clock rates from d.c. to a maximum of f r (see ac electrical characteristics). figure 9. read data instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (03h) high impedance 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 7 6 5 4 3 2 1 0 7 24-bit address 23 22 21 3 2 1 0 data out 1 * * = msb *
w25q16cv - 28 - 7.2.11 fast read (0bh) the fast re ad instruction is similar to the read data instruction except that it can operate at the highest possible frequency of f r (see ac electrical characteristics). this is accomplished by adding eight dummy clocks after the 24 - bit address as shown in figure 1 0. the dummy clocks allow the devices internal circuits additional time for setting up the initial address. during the dummy clocks the data value on the do pin is a dont care. figure 10. fast read instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (0bh) high impedance 8 9 10 28 29 30 31 24-bit address 23 22 21 3 2 1 0 data out 1 * /cs clk di (io 0 ) do (io 1 ) 32 33 34 35 36 37 38 39 dummy clocks high impedance 40 41 42 44 45 46 47 48 49 50 51 52 53 54 55 7 6 5 4 3 2 1 0 7 data out 2 * 7 6 5 4 3 2 1 0 * 43 31 0 = msb *
w25q16cv publication release date: october 03 , 201 3 - 29 - revision g 7.2.12 fast read dual output (3bh) the fast read dual output (3bh) instruction is similar to the standard fast read (0bh) instruction except that data is output on two pins; io 0 and io 1 . this allows data to be transferred from the w25q16c v at twice the rate of standard spi devices. the fast read dual output instruction is ideal for quickly downloading code from flash to ram upon power - up or for applications that cache code - segments to ram for execution. similar to the fast read instruction, the fast read dual output instruction can operate at the highest possible frequency of f r (see ac electrical characteristics). this is accomplished by adding eight dummy clocks after the 24 - bit address as shown in figure 11. the dummy clocks allow the device's internal circuits additional time f or setting up the initial address. the input data during the dummy clocks is dont care. however, the io 0 pin should be high - impedance prior to the falling edge of the first data out clock. figure 11. fast read dual output i nstruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (3bh) high impedance 8 9 10 28 29 30 32 33 34 35 36 37 38 39 6 4 2 0 24-bit address 23 22 21 3 2 1 0 * * 31 31 /cs clk di (io 0 ) do (io 1 ) dummy clocks 0 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 7 5 3 1 high impedance 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 io 0 switches from input to output 6 7 data out 1 * data out 2 * data out 3 * data out 4 = msb *
w25q16cv - 30 - 7.2.13 fast read quad output (6bh) the fast read quad output (6bh) instruction is similar to the fast read dual output (3bh) instruction except that data is output on four pins, io 0 , io 1 , io 2 , and io 3 . a quad enable of status registe r - 2 must be executed before the device will accept the fast read quad output instruction (status register bit qe must equal 1 ) . the fast read quad output instruction allows data to be transferred from the w25q16c v at four times the rate of standard spi dev ices. the fast read quad output instruction can operate at the highest possible frequency of f r (see ac electrical characteristics). this is accomplished by adding eight dummy clocks after the 24 - bit address as shown in figure 12. the dummy clocks allow the device's internal circuits additional time for setting up the initial address. the input data during the dummy clocks is dont care. however, the io pins should be high - impedance prior to the falling edge of the first data out clock. figure 12. fast read quad output instruction sequence diagram /cs clk mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (6bh) high impedance 8 9 10 28 29 30 32 33 34 35 36 37 38 39 4 0 24-bit address 23 22 21 3 2 1 0 * 31 31 /cs clk dummy clocks 0 40 41 42 43 44 45 46 47 5 1 high impedance 4 5 byte 1 high impedance high impedance 6 2 7 3 high impedance 6 7 high impedance 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 byte 2 byte 3 byte 4 io 0 switches from input to output io 0 io 1 io 2 io 3 io 0 io 1 io 2 io 3 = msb *
w25q16cv publication release date: october 03 , 201 3 - 31 - revision g 7.2.14 f ast read dual i/o (bbh) the fast read dual i/o (bbh) instruction allows for improved random access while maintaining two io pins, io 0 and io 1 . it is similar to the fast read dual output (3bh) instruct ion but with the capability to input the address bits (a23 - 0) two bits per clock. this reduced instruction overhead may allow for code execution (xip) directly from the d ua l spi in some applications. fast read dual i/o with continuous read mode the fast read dual i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 1 3a . the upper nibble of the (m7 - 4) controls the length of the next fast read dual i/o instruction through the inclusion or exclusion of the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the first data out clock. if t he continuous read mode bits m5 - 4 = (1,0), then the next fast read dual i/o instruction ( after /cs is raised and then lowered) does not require the bbh instruction code, as shown in figure 1 3b. this reduces the instruction sequence by eight clocks and al lows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bits m5 - 4 do not equal to (1,0), the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning t o normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before issuing normal instructions (see 7 .2.20 for detail descriptions). figure 1 3 a . fast read dual i/ o instruction sequence ( initial instruction or previous m 5 - 4 ? 10 ) /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (bbh) 8 9 10 12 13 14 24 25 26 27 28 29 30 31 6 4 2 0 * * 23 /cs clk di (io 0 ) do (io 1 ) 0 32 33 34 35 36 37 38 39 7 5 3 1 * 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 * * ios switch from input to output 6 7 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 11 15 16 17 18 20 21 22 19 23 1 a23-16 a15-8 a7-0 m7-0 byte 1 byte 2 byte 3 byte 4 = msb * *
w25q16cv - 32 - figure 1 3 b . fast read dual i/ o instruction sequence ( previous instruction set m5 - 4 = 10 ) /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 8 9 10 12 13 14 24 25 26 27 28 29 30 31 6 4 2 0 * * 15 /cs clk di (io 0 ) do (io 1 ) 0 7 5 3 1 * 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 * * ios switch from input to output 6 7 22 20 18 16 23 21 19 17 14 12 10 8 15 13 11 9 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 11 15 1 a23-16 a15-8 a7-0 m7-0 byte 1 byte 2 byte 3 byte 4 0 1 2 3 4 5 6 7 16 17 18 20 21 22 19 23 * = msb *
w25q16cv publication release date: october 03 , 201 3 - 33 - revision g 7.2.15 fast read quad i/o (ebh) the fast read quad i/o (ebh) instruction is similar to the fast read dual i/o (bbh) instruction except that address and data bits are input and output through four pins io 0 , io 1 , io 2 and io 3 and four dummy clock are required prior to the data output . the quad i/o dramatically reduces instruction overhead allowing faster random access for code execution (xip) directly from the quad spi. the quad e nable bit (qe) of status register - 2 must be set to enable the fast r ead quad i/o instruction . fast read quad i/o with continuous read mode the fast read quad i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 14 a . the upper nibble of the (m7 - 4) controls the length of the next fast read quad i/o instruction through the inclusion or exclusion of the first byte instruct ion code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the first data out clock. if the continuous read mode bits m5 - 4 = (1,0), then the next fast read quad i/o inst ruction ( after /cs is raised and then lowered) does not require the ebh instruction code, as shown in figure 1 4b. this reduces the instruction sequence by eight clocks and allows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bits m5 - 4 do not equal to (1,0), the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before issuing normal instructions (see 7 .2.20 for detail descriptions). figure 1 4 a . fast read quad i/ o instruction sequence ( initial instruction or previous m 5 - 4 ? 10 ) m7-0 /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 20 16 12 8 21 17 22 18 23 19 13 9 14 10 15 11 a23-16 6 7 8 9 4 0 5 1 6 2 7 3 a15-8 a7-0 byte 1 byte 2 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 10 11 12 13 14 4 5 6 7 ios switch from input to output byte 3 15 16 17 18 19 20 21 22 23 dummy dummy instruction (ebh)
w25q16cv - 34 - figure 1 4 b . fast read quad i/ o instruction sequence ( previous instruction set m5 - 4 = 10 ) fast read quad i/o with 8/16/32/64 - byte wrap around the fast read quad i/o instruction can also be used to access a spec ific portion within a page by issuing a set burst with wrap command prior to ebh. the set burst with wrap command can either enable or disable the wrap around feature for the following ebh commands. when wrap around is enabled, the data being acces sed can be limited to either an 8, 16, 32 or 64 - byte section of a 256 - byte page. the output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64 - byte section, the output will wrap around to the beginning boundary automatically until /cs is pulled high to terminate the command. the burst with wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64 - byte) of data without issuing multiple read commands. the set burst with wrap instruction allows three wrap bits, w6 - 4 to be set. the w4 bit is used to enable or disable the wrap around operation while w6 - 5 are used to specify the length of the wra p around section within a page. see 7 .2.18 for detail descriptions. m7-0 /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 20 16 12 8 21 17 22 18 23 19 13 9 14 10 15 11 a23-16 6 7 8 9 4 0 5 1 6 2 7 3 a15-8 a7-0 byte 1 byte 2 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 10 11 12 13 14 4 5 6 7 ios switch from input to output byte 3 15 dummy dummy
w25q16cv publication release date: october 03 , 201 3 - 35 - revision g 7.2.16 word read quad i/o (e7h) the word read quad i/o (e7h) instruction is similar to the fast read quad i/o (ebh) instruction except that the lowest address bit (a0) must equal 0 and only two dummy clocks are required prior to the data output. the quad i/o dramatically reduces instruction overhead allowing faster random access for code execution (xip) directly from the quad spi. the quad e nable bit (qe) of status register - 2 must be set to enab le the word r ead quad i/o instruction . word read quad i/o with continuous read mode the word read quad i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 15 a . the upper nibble of the (m7 - 4) controls the length of the next fast read quad i/o instruction through the inclusion or exclusion of the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, th e io pins should be high - impedance prior to the falling edge of the first data out clock. if the continuous read mode bits m5 - 4 = (1,0), then the next fast read quad i/o instruction ( after /cs is raised and then lowered) does not require the e7h instruc tion code, as shown in figure 1 5b. this reduces the instruction sequence by eight clocks and allows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bits m5 - 4 do not equal to (1,0), the next instruction ( a fter /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before iss uing normal instructions (see 7 .2.20 for detail descrip tions). figure 1 5 a . word read quad i/ o instruction sequence ( initial instruction or previous m 5 - 4 ? 10 ) m7-0 /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 20 16 12 8 21 17 22 18 23 19 13 9 14 10 15 11 a23-16 6 7 8 9 4 0 5 1 6 2 7 3 a15-8 a7-0 byte 1 byte 2 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 10 11 12 13 14 4 5 6 7 ios switch from input to output byte 3 15 16 17 18 19 20 21 dummy instruction (e7h)
w25q16cv - 36 - figure 1 5 b . word read quad i/ o instr uction sequence ( previous instruction set m5 - 4 = 10 ) word read quad i/o with 8/16/32/64 - byte wrap around the word read quad i/o instruction can also be used to access a specific portion within a page by issuing a set burst with wrap command prior to e 7h. the set burst with wrap command can either enable or disable the wrap around feature for the following e7h commands. when wrap around is enabled, the data being accessed can be limited to either an 8, 16, 32 or 64 - byte section of a 256 - byte page. the output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64 - byte section, the output will wrap around to the beginning boundary automatically until /cs is pulled high to terminate the c ommand. the burst with wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64 - byte) of data without issuing multiple read commands. the set burst with wrap instruction allows three wrap bits, w6 - 4 to be set. the w4 bit is used to enable or disable the wrap around operation while w6 - 5 are used to specify the length of the wrap arou nd section within a page. see 7 .2.18 for detail descriptions. m7-0 /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 20 16 12 8 21 17 22 18 23 19 13 9 14 10 15 11 a23-16 6 7 4 0 5 1 6 2 7 3 a15-8 a7-0 4 0 5 1 6 2 7 3 byte 1 byte 2 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 5 6 7 ios switch from input to output byte 3 8 9 10 11 12 13 dummy
w25q16cv publication release date: october 03 , 201 3 - 37 - revision g 7.2.17 octal word read quad i/o (e3h) the octal word read quad i/o (e3h) instruction is similar to the fast read quad i/o (ebh) instruction except that the lower four address bits (a0, a1, a2, a3) must equal 0. as a result, the dummy clocks are not required, which further reduces the instruction overhead allowing even faster random access for code execution (xip). the quad enable bit (qe) of status register - 2 must be set to enable the octal word read quad i/o instruction. octal word read quad i/o with continuous read mode the octal word read quad i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 16a. the upper nibble of the (m7 - 4) controls the length of th e next octal word read quad i/o instruction through the inclusion or exclusion of the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the firs t data out clock. if the continuous read mode bits m5 - 4 = (1,0), then the next fast read quad i/o instruction ( after /cs is raised and then lowered) does not require the e3h instruction code, as shown in figure 1 6b. this reduces the instruction sequence by eight clocks and allows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bits m5 - 4 do not equal to (1,0), the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before iss uing normal instructions (see 7 .2.20 for detail descriptions). figure 16a. octal word read quad i/o instruction sequence ( in itial instruction or previous m 5 - 4 ? 10 ) m7-0 /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 20 16 12 8 21 17 22 18 23 19 13 9 14 10 15 11 a23-16 6 7 8 9 4 0 5 1 6 2 7 3 a15-8 a7-0 byte 1 byte 2 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 10 11 12 13 14 4 5 6 7 ios switch from input to output byte 3 15 16 17 18 19 20 21 instruction (e3h) 4 0 5 1 6 2 7 3 byte 4
w25q16cv - 38 - figure 16b. octal word read quad i/o instruction sequence ( previous instruction set m5 - 4 = 10 ) m7-0 /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 20 16 12 8 21 17 22 18 23 19 13 9 14 10 15 11 a23-16 6 7 4 0 5 1 6 2 7 3 a15-8 a7-0 4 0 5 1 6 2 7 3 byte 1 byte 2 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 5 6 7 ios switch from input to output byte 3 8 9 10 11 12 13 4 0 5 1 6 2 7 3 byte 4
w25q16cv publication release date: october 03 , 201 3 - 39 - revision g 7.2.18 set burst with wrap (77h) the set burst with wrap (77h) instruction is used in conjunction with fast read q uad i/o and word read quad i/o instructions to access a fixed length of 8/16/32/64 - byte section within a 256 - byte page. certain applications can benefit from this feature and improve the overall system code execution performance. similar to a quad i/o i nstruction, the set burst with wrap instruction is initiated by driving the /cs pin low and then shifting the instruction code 77h followed by 24 dummy bits and 8 wrap bits, w7 - 0. the instruction sequence is shown in figure 17. wrap bit w7 and the lowe r nibble w3 - 0 are not used. w6, w5 w4 = 0 w4 =1 (default) wrap around wrap length wrap around wrap length 0 0 yes 8 - byte no n/a 0 1 yes 16 - byte no n/a 1 0 yes 32 - byte no n/a 1 1 yes 64 - byte no n/a once w6 - 4 is set by a set burst with wrap instr uction, all the following fast read quad i/o and word read quad i/o instructions will use the w6 - 4 setting to access the 8/16/32/64 - byte section within any page. to exit the wrap around function and return to normal read operation, another set burst with wrap instruction should be issued to set w4 = 1. the default value of w4 upon power on is 1. in the case of a system reset while w4 = 0, it is recommended that the controller issues a set burst with wrap instruction to reset w4 = 1 prior to any normal read instructions since w25q16c v does not have a hardware reset pin. figure 17. set burst with wrap instruction sequence wrap bit /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 x x x x x x x x don't care 6 7 8 9 don't care don't care 10 11 12 13 14 15 instruction (77h) mode 0 mode 3 x x x x x x x x x x x x x x x x w4 x w5 x w6 x x x
w25q16cv - 40 - 7.2.19 continuous read mode bits (m7 - 0) the continuous read mode bits are used in conjunction with fast read dual i/o, fast read qua d i/o, word read quad i/o and octal word read quad i/o instructions to provide the highest random flash memory access rate with minimum spi instruction overhead, thus allow true xip (execute in place) to be performed on serial flash devices. m7 - 0 need to be set by the dual/quad i/o read instructions. m5 - 4 are used to control whether the 8 - bit spi instruction code (bbh, ebh, e7h or e3h) is needed or not for the next command. when m5 - 4 = (1,0), the next command will be treated same as the current dual/qu ad i/o read command without needing the 8 - bit instruction code; when m5 - 4 do not equal to (1,0), the device returns to normal spi mode, all commands can be accepted. m7 - 6 and m3 - 0 are reserved bits for future use, either 0 or 1 values can be used. 7.2.20 continuo us read mode reset (ffh or ffffh) continuous read mode reset instruction can be used to set m4 = 1, thus the device will release the continuous read mode and return to normal spi operation, as shown in figure 18. figure 18. co ntinuous read mode reset for fast read dual/quad i/o since w25q16c v does not have a hardware reset pin, so if the controller resets while w25q16c v is set to continuous mode read, the w25q16c v will not recognize any initial standard spi instructions from th e controller. to address this possibility, it is recommended to issue a continuous read mode reset instruction as the first instruction after a system reset. doing so will release the device from the continuous read mode and allow standard spi instructions to be recognized. to reset continuous read mode during quad i/o operation, only eight clocks are needed. the instruction is ffh. to reset continuous read mode during dual i/o operation, sixteen clocks are needed to shift in instruction ffffh. /cs clk mode 0 mode 3 0 1 io 0 io 1 io 2 io 3 2 3 4 5 don't care 6 7 8 9 10 11 12 13 14 15 mode bit reset for quad i/o (ffh) mode 0 mode 3 mode bit reset for dual i/o (ffffh) don't care don't care
w25q16cv publication release date: october 03 , 201 3 - 41 - revision g 7.2.21 pag e program (02h) the page program instruction allows from one byte to 256 bytes (a page) of data to be programmed at previously erased (ffh) memory locations. a write enable instruction must be executed before the device will accept the page program instru ction (status register bit wel= 1). the instruction is initiated by driving the /cs pin low then shifting the instruction code 02h followed by a 24 - bit address (a23 - a0) and at least one data byte, into the di pin. the /cs pin must be held low for the ent ire length of the instruction while data is being sent to the device. the page program instruction sequence is shown in figure 19. if an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. if the last address byte is not zero, and the number of clocks exceed the remaining page length, the addressing will wrap to the beginning of the page. in some cases, less than 256 bytes (a partial page) can be programmed without having any effect on o ther bytes within the same page. one condition to perform a partial page program is that the number of clocks can not exceed the remaining page length. if more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously sent data. as with the write and erase instructions, the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the page program instruction will not be executed. after /cs is driven hig h, the self - timed page program instruction will commence for a time duration of tpp (see ac characteristics). while the page program cycle is in progress, the read status register instruction may still be accessed for checking the status of the busy bit. t he busy bit is a 1 during the page program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. after the page program cycle has finished the write enable latch (wel) bit in the status register is cle ared to 0. the page program instruction will not be executed if the addressed page is protected by the block protect (cmp, sec, tb, bp2, bp1, and bp0) bits. figure 19. page program instruction sequence diagram /cs clk di (io 0 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (02h) 8 9 10 28 29 30 39 24-bit address 23 22 21 3 2 1 * /cs clk di (io 0 ) 40 41 42 43 44 45 46 47 data byte 2 48 49 50 52 53 54 55 2072 7 6 5 4 3 2 1 0 51 39 0 31 0 32 33 34 35 36 37 38 data byte 1 7 6 5 4 3 2 1 * mode 0 mode 3 data byte 3 2073 2074 2075 2076 2077 2078 2079 0 data byte 256 * 7 6 5 4 3 2 1 0 * 7 6 5 4 3 2 1 0 * = msb *
w25q16cv - 42 - 7.2.22 quad input pag e program ( 3 2h) the quad page program instruction allows up to 256 bytes of data to be programmed at previously erased (ffh) memory locations using four pins: io 0 , io 1 , io 2 , and io 3 . the quad page program can improve performance for prom programmer and a pplications that have slow clock speeds <5mhz. systems with faster clock speed will not realize much benefit for the quad page program instruction since the inherent page program time is much greater than the time it take to clock - in the data. to use quad page program the quad enable in status register - 2 must be set (qe=1). a write enable instruction must be executed before the device will accept the quad page program instruction (status register - 1, wel=1). the instruction is initiated by driving the /cs pi n low then shifting the instruction code 32h followed by a 24 - bit address (a23 - a0) and at least one data byte, into the io pins. the /cs pin must be held low for the entire length of the instruction while data is being sent to the device. all other funct ions of quad page program are identical to standard page program. the quad page program instruction sequence is shown in figure 20. figure 20. quad input page program instruction sequence diagram /cs clk mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (32h) 8 9 10 28 29 30 32 33 34 35 36 37 4 0 24-bit address 23 22 21 3 2 1 0 * 31 31 /cs clk 5 1 byte 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 byte 2 byte 3 byte 256 0 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 536 537 538 539 540 541 542 543 mode 0 mode 3 byte 253 byte 254 byte 255 io 0 io 1 io 2 io 3 io 0 io 1 io 2 io 3 * * * * * * * = msb *
w25q16cv publication release date: october 03 , 201 3 - 43 - revision g 7.2.23 sector erase (20h) the sector erase instruction sets all memory within a specified sector (4k - bytes) to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the sector erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code 20h followed a 24 - bit sector address (a23 - a0) (see figure 2). the sector erase instruction sequence is shown in figure 21 . the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the sector erase instruction will not be executed. after /cs is driven high, the self - timed sector erase instruction will commence for a time duration of t se (see ac characteristics). while the sector erase cycle is i n progress, the read status register instruction may still be accessed for checking the status of the busy bit. the busy bit is a 1 during the sector erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instruction s again. after the sector erase cycle has finished the write enable latch (wel) bit in the status register is cleared to 0. the sector erase instruction will not be executed if the addressed page is protected by the block protect (cmp, sec, tb, bp2, bp1, a nd bp0) bits (see status register memory protection table). figure 21. sector erase instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (20h) high impedance 8 9 29 30 31 24-bit address 23 22 2 1 0 * mode 0 mode 3 = msb *
w25q16cv - 44 - 7.2.24 32kb block erase (52h) the block erase instruction sets all memory within a specified block (32k - bytes) to the erased state of all 1s (ff h). a write enable instruction must be executed before the device will accept the block erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code 52h followed a 24 - bit block address (a23 - a0) (see figure 2). the block erase instruction sequence is shown in figure 22. the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the block erase instruction will not be execu ted. after /cs is driven high, the self - timed block erase instruction will commence for a time duration of t be 1 (see ac characteristics). while the block erase cycle is in progress, the read status register instruction may still be accessed for checking th e status of the busy bit. the busy bit is a 1 during the block erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. after the block erase cycle has finished the write enable latch (wel) bit in t he status register is cleared to 0. the block erase instruction will not be executed if the addressed page is protected by the block protect (cmp, sec, tb, bp2, bp1, and bp0) bits (see status register memory protection table). figure 22. 32kb block eras e instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (52h) high impedance 8 9 29 30 31 24-bit address 23 22 2 1 0 * mode 0 mode 3 = msb *
w25q16cv publication release date: october 03 , 201 3 - 45 - revision g 7.2.25 64kb block erase (d8h) the block erase instruction sets all memory within a specified block (64k - bytes) to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the bl ock erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code d8h followed a 24 - bit block address (a23 - a0) (see figure 2). the block erase instruction sequence is s hown in figure 23. the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the block erase instruction will not be executed. after /cs is driven high, the self - timed block erase instruction will commence for a time duration of t be (see ac characteristics). while the block erase cycle is in progress, the read status register instruction may still be accessed for checking the status of the busy bit. the busy bit is a 1 during the block erase cycle and become s a 0 when the cycle is finished and the device is ready to accept other instructions again. after the block erase cycle has finished the write enable latch (wel) bit in the status register is cleared to 0. the block erase instruction will not be executed if the addressed page is protected by the block protect (cmp, sec, tb, bp2, bp1, and bp0) bits (see status register memory protection table). figure 23. 64kb block erase instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (d8h) high impedance 8 9 29 30 31 24-bit address 23 22 2 1 0 * mode 0 mode 3 = msb *
w25q16cv - 46 - 7.2.26 chip erase (c7h / 60h ) t he chip erase instruction sets all memory within the device to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the chip erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code c7h or 60h . the chip erase instruction sequence is shown in figure 24. the /cs pin must be driven high after the eighth bit has been latched. if this is not done the chip erase ins truction will not be executed. after /cs is driven high, the self - timed chip erase instruction will commence for a time duration of t ce (see ac characteristics). while the chip erase cycle is in progress, the read status register instruction may still be a ccessed to check the status of the busy bit. the busy bit is a 1 during the chip erase cycle and becomes a 0 when finished and the device is ready to accept other instructions again. after the chip erase cycle has finished the write enable latch (wel) bit in the status register is cleared to 0. the chip erase instruction will not be executed if any page is protected by the block protect (cmp, sec, tb, bp2, bp1, and bp0) bits (see status register memory protection table). figure 24. chip erase instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (c7h/60h) high impedance mode 0 mode 3
w25q16cv publication release date: october 03 , 201 3 - 47 - revision g 7.2.27 erase / program suspend (75h) the erase /program suspend instruction 75h , allows the system to interrupt a s ector or b lock e rase operation or a page program operation and then read from or p rogram /erase data to , any other sector s or blocks . the erase/program suspend instruction sequence is shown in figure 25. the write status register instruction (01h) and erase instructions (20h, 52h, d8h, c7h, 60h, 44h) are not allowed during erase suspend. erase suspend is va lid only during the s ector or b lock erase operation. if written during the c hip e rase operation, the erase suspend instruction is ignored. the write status register instruction (01h) and program instructions (02h, 32h, 42h) are not allowed during program s uspend. program suspend is valid only during the page program or quad page program operation. the erase/program suspend instruction 75h will be accepted by the device only if the sus bit in the status register equals to 0 and the busy bit equals to 1 whi le a sector or block erase or a page program operation is on - going. if the sus bit equals to 1 or the busy bit equals to 0, the suspend instruction will be ignored by the device. a maximum of time of t sus (see ac characteristics) is required to suspend t he erase or program operation. the busy bit in the status register will be clear ed from 1 to 0 within t sus and the sus bit in the status register will be set from 0 to 1 immediately after erase/program suspend. for a previously resumed erase/program oper ation, it is also required that the suspend instruction 75h is not issued earlier than a minimum of time of t sus following the preceding resume instruction 7ah. unexpected power off during the erase/program suspend state will reset the device and rel ease the suspend state. sus bit in the status register will also reset to 0. the data within the page, sector or block that was being suspended may become corrupted. when the device is powered up again, i t is recommended for the user to repeat the same era se or program operation that was interrupted, at the same address location, to avoid the potention data corruption. figure 2 5 . erase /program suspend instruction sequence /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (75h) high impedance mode 0 mode 3 tsus accept instructions
w25q16cv - 48 - 7.2.28 erase / program resume (7ah) the erase /program resume instruction 7ah must be written to resume the s ector or b lock e rase operation or the page program operation after an erase/program suspend . the resume instruction 7ah will be accepted by the device only if the sus bit in the status register equals to 1 and the busy bit equals to 0. after issued the sus bit will be clear ed from 1 to 0 immediately, the busy bit will be set from 0 to 1 within 200ns and the sector or block will complete the erase operation or the page will complete the program operation. if the sus bit equals to 0 or the busy bit equals to 1, the resume instruction 7ah will be ignored by the device. the erase/program resume instruction sequence is shown in figure 26. resume instruction is ignored if the previous erase/program suspend opera tion was interrupted by unexpected power off. it is also required that a subsequent erase/program suspend instruction not to be issued within a minimum of time of t sus following a previous resume instruction. figure 2 6 . eras e /program resume instruction sequence /cs clk di (io 0 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (7ah) mode 0 mode 3 resume previously suspended program or erase
w25q16cv publication release date: october 03 , 201 3 - 49 - revision g 7.2.29 power - down (b9h) although the standby current during normal operation is relatively low, standby current can be further reduced with the power - down instruction. the lower power consumption makes the power - down instruc tion especially useful for battery powered applications (see icc1 and icc2 in ac characteristics). the instruction is initiated by driving the /cs pin low and shifting the instruction code b9h as shown in figure 2 7 . the /cs pin must be driven high after the eighth bit has been latched. if this is not done the power - down instruction will not be executed. after /cs is driven high, the power - down state will entered within the time duration of t dp (see ac characteristics). while in the power - down state only the release from power - down / device id instruction, which restores the device to normal operation, will be recognized. all other instructions are ignored. this includes the read status register instruction, which is always available during normal operatio n. ignoring all but one instruction makes the power down state a useful condition for securing maximum write protection. the device always powers - up in the normal operation with the standby current of icc1. figure 2 7 . deep po wer - down instruction sequence diagram /cs clk di (io 0 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (b9h) mode 0 mode 3 tdp power-down current stand-by current
w25q16cv - 50 - 7.2.30 release power - down / device id (abh) the release from power - down / device id instruction is a multi - purpose instruction. it can be used to release the device from the power - down state , or obtain the devices electro nic identification (id) number. to release the device from the power - down state, the instruction is issued by driving the /cs pin low, shifting the instruction code abh and driving /cs high as shown in figure 2 8a . release from power - down will take the t ime duration of t res 1 (see ac characteristics) before the device will resume normal operation and other instructions are accepted. the /cs pin must remain high during the t res 1 time duration. when used only to obtain the device id while not in the power - do wn state, the instruction is initiated by driving the /cs pin low and shifting the instruction code abh followed by 3 - dummy bytes. the device id bits are then shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 2 8a . the device id values for the w25q16c v is listed in manufacturer and device identification table. the device id can be read continuously. the instruction is completed by driving /cs high. when used to release the device from the power - down state and obtain the device id, the instruction is the same as previously described, and shown in figure 2 8b , except that after /cs is driven high it must remain high for a time duration of t res 2 (see ac characteristics). after this time duration the device will res ume normal operation and other instructions will be accepted. if the release from power - down / device id instruction is issued while an erase, program or write cycle is in process (when busy equals 1) the instruction is ignored and will not have any effect s on the current cycle. figure 2 8a . release power - down instruction sequence /cs clk di (io 0 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (abh) mode 0 mode 3 tres1 power-down current stand-by current
w25q16cv publication release date: october 03 , 201 3 - 51 - revision g figure 2 8b . release power - down / device id instruction sequence diagram tres2 /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (abh) high impedance 8 9 29 30 31 3 dummy bytes 23 22 2 1 0 * mode 0 mode 3 7 6 5 4 3 2 1 0 * 32 33 34 35 36 37 38 device id power-down current stand-by current = msb *
w25q16cv - 52 - 7.2.31 read manufacturer / device id (90h) the read manufacturer/device id instruction is an alternative to the release from power - down / device id instruction that provides both the jedec assigned manufacturer id and the specific device id. the read manufacturer/device id instruction is very similar to th e release from power - down / device id instruction. the instruction is initiated by driving the /cs pin low and shifting the instruction code 90h followed by a 24 - bit address (a23 - a0) of 000000h. after which, the manufacturer id for winbond (efh) and the device id are shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 29 . the device id values for the w25q16c v is listed in manufacturer and device identification table. if the 24 - bit address is initially set to 000 001h the device id will be read first and then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving /cs high. figu re 29 . read manufacturer / device id diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (90h) high impedance 8 9 10 28 29 30 31 address (000000h) 23 22 21 3 2 1 0 device id * /cs clk di (io 0 ) do (io 1 ) 32 33 34 35 36 37 38 39 manufacturer id (efh) 40 41 42 44 45 46 7 6 5 4 3 2 1 0 * 43 31 0 mode 0 mode 3 = msb *
w25q16cv publication release date: october 03 , 201 3 - 53 - revision g 7.2.32 read manufacturer / device id dual i/o (92h) the manufacturer / device id dual i/o instruction is an alternative to the read manufacturer/device id instruction that provides both the jedec assigned manufacture r id and the specific device id at 2x speed. the read manufacturer / device id dual i/o instruction is similar to the fast read dual i/o instruction. the instruction is initiated by driving the /cs pin low and shifting the instruction code 92h followed b y a 24 - bit address (a23 - a0) of 000000h, 8 - bit continuous read mode bits, with the capability to input the address bits two bits per clock . after which, the manufacturer id for winbond (efh) and the device id are shifted out 2 bits per clock on the falling edge of clk with most significant bits (msb) first as shown in figure 30 . the device id values for the w25q16c v is listed in manufacturer and device identification table. if the 24 - bit address is initially set to 000001h the device id will be read first an d then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving /cs high. figure 30 . read manufacturer / device id dual i/o diagram note: the continuous read mode bits m7 - 0 must be set to fxh to be compatible with fast read dual i/o instruction. /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (92h) high impedance 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 7 5 3 1 * * 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 23 * * a23-16 a15-8 a7-0 (00h) m7-0 /cs clk di (io 0 ) do (io 1 ) 24 25 26 27 28 29 30 31 32 33 34 36 37 38 35 23 0 mode 0 mode 3 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 1 6 4 2 0 7 5 3 6 4 2 1 0 1 mfr id device id mfr id (repeat) device id (repeat) ios switch from input to output * * * * = msb *
w25q16cv - 54 - 7.2.33 read manufacturer / device id quad i/o (94h) the read manufacturer / device id quad i/o instruction is an alternative to the read manufacturer / devic e id instruction that provides both the jedec assigned manufacturer id and the specific device id at 4x speed. the read manufacturer / device id quad i/o instruction is similar to the fast read quad i/o instruction. the instruction is initiated by driving the /cs pin low and shifting the instruction code 94h followed by a 24 - bit address (a23 - a0) of 000000h , 8 - bit continuous read mode bits and then four clock dummy cycles, with the capability to input the address bits four bits per clock . after which, the manufacturer id for winbond (efh) and the device id are shifted out four bits per clock on the falling edge of clk with most significant bit (msb) first as shown in figure 31 . the device id values for the w25q16c v is listed in manufacturer and device iden tification table. if the 24 - bit address is initially set to 000001h the device id will be read first and then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is c ompleted by driving /cs high. figure 31 . read manufacturer / device id quad i/o diagram note: the continuous read mode bits m7 - 0 must be set to fxh to be compatible with fast read quad i/o instruction. mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (94h) high impedance 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 5 1 4 0 23 mode 0 mode 3 ios switch from input to output high impedance 7 3 6 2 /cs clk io 0 io 1 io 2 io 3 high impedance a23-16 a15-8 a7-0 (00h) m7-0 mfr id device id dummy dummy /cs clk io 0 io 1 io 2 io 3 23 0 1 2 3 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 5 1 4 0 7 3 6 2 24 25 26 27 28 29 30 mfr id (repeat) device id (repeat) mfr id (repeat) device id (repeat)
w25q16cv publication release date: october 03 , 201 3 - 55 - revision g 7.2.34 read unique id number (4bh) the read unique id number instruction accesses a factory - set read - only 64 - bit number that is unique to each w25q16c v device. the id number can be used in conjunction with user software methods to help prevent copying or cloning of a system. the read unique id instruction is initiated by driving the /cs pin low and shifting the instruction code 4bh followed by a four bytes of dummy clocks. after which, the 64 - bit id is shifted out on the falling edge of clk as shown in figure 32 . figure 32 . read unique id number instruc tion sequence /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (4bh) high impedance 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 /cs clk di (io 0 ) do (io 1 ) 24 25 26 27 28 29 30 31 32 33 34 36 37 38 35 23 mode 0 mode 3 * dummy byte 1 dummy byte 2 39 40 41 42 dummy byte 3 dummy byte 4 63 62 61 2 1 0 64-bit unique serial number 100 101 102 high impedance = msb *
w25q16cv - 56 - 7.2.35 read jedec id (9fh) for compatibility reasons, the w25q16c v provides several instructions to electronically determine the identity of the device. the read jedec id instruction is compatible with the jedec standard for spi compatible serial memories that was adopted in 2003. the instruction is initiated by driving the /cs pin low and shifting the instruction code 9fh. the jedec assigned manufacturer id byte for winbond (efh) and two device id bytes, memory type (id15 - id8) and capacity (id7 - id0) are then shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 33 . for memory type and capacity values refer to manufacturer and device identification table. figure 33 . read jedec id instruction sequence /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (9fh) high impedance 8 9 10 12 13 14 15 capacity id7-0 /cs clk di (io 0 ) do (io 1 ) 16 17 18 19 20 21 22 23 manufacturer id (efh) 24 25 26 28 29 30 7 6 5 4 3 2 1 0 * 27 15 mode 0 mode 3 11 7 6 5 4 3 2 1 0 * memory type id15-8 = msb *
w25q16cv publication release date: october 03 , 201 3 - 57 - revision g 7.2.36 read sfdp register (5ah) the w25q1 6c v features a 256 - byte serial flash discoverable parameter (sfdp) register that contains information about device configurations, available instructions and other features . the sfdp parameters are stored in one or more parameter identification (pid) tables. currently only one pid table is specified, but more may be added in the future. the read sfdp register instruction is com patible with the sfdp standard initially established in 2010 for pc and o ther applications, as well as the jedec standard 1.0 that is published in 2011 . most winbond spiflash memories shipped after june 2011 (date code 1124 and beyond) support the sfdp feature as specified in the applicable datasheet. the read sfdp instruction is initiated by driving the /cs pin low and shifting the instruction code 5ah followed by a 24 - bit address (a23 - a0) (1) into the di pin. eight dummy clocks are also required before the sfdp register contents are shifted out on the falling edge of the 4 0 th clk with most significant bit (msb) first as shown in figure 3 4 . for sfdp register values and descriptions, please refer to the winbond application note for sfdp definition table . note: 1. a23 - a8 = 0; a7 - a0 are used to define the starting byte address for the 256 - byte sfdp register. figure 3 4 . read sfdp register instruction sequence diagram /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (5ah) high impedance 8 9 10 28 29 30 31 24-bit address 23 22 21 3 2 1 0 data out 1 * /cs clk di (io 0 ) do (io 1 ) 32 33 34 35 36 37 38 39 dummy byte high impedance 40 41 42 44 45 46 47 48 49 50 51 52 53 54 55 7 6 5 4 3 2 1 0 7 data out 2 * 7 6 5 4 3 2 1 0 * 7 6 5 4 3 2 1 0 43 31 0 = msb *
w25q16cv - 58 - 7.2.37 erase security registers (44h) the w25q16c v offers three 256 - byte security registers which can be erased and programmed individually. these registers may be use d by the system manufacturers to store security and other important information separately from the main memory array. the erase security register instruction is similar to the sector erase instruction. a write enable instruction must be executed before th e device will accept the erase security register instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code 44h followed by a 24 - bit address (a23 - a0) to erase one of the t hree security registers. address a23 - 16 a15 - 12 a11 - 8 a7 - 0 security register #1 00h 0 0 0 1 0 0 0 0 dont care security register #2 00h 0 0 1 0 0 0 0 0 dont care security register #3 00h 0 0 1 1 0 0 0 0 dont care the erase security register instruc tion sequence is shown in figure 3 5 . the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the instruction will not be executed. after /cs is driven high, the self - timed erase security register operatio n will commence for a time duration of t se (see ac characteristics). while the erase security register cycle is in progress, the read status register instruction may still be accessed for checking the status of the busy bit. the busy bit is a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. after the erase security register cycle has finished the write enable latch (wel) bit in the status register is cleared to 0. t he security re gister lock bits lb [3:1] in the status register - 2 can be used to otp protect the security registers. once a lock bit is set to 1, the corresponding security register will be permanently locked, erase security register instruction to that register will be i gnored (see 7 .1.9 for detail descriptions). figure 3 5 . erase security registers instruction sequence /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (44h) high impedance 8 9 29 30 31 24-bit address 23 22 2 1 0 * mode 0 mode 3 = msb *
w25q16cv publication release date: october 03 , 201 3 - 59 - revision g 7.2.38 program security registers (42h) the program security register instruction is similar to the page program instruction. it allows from one byte to 256 b ytes of security register data to be programmed at previously erased (ffh) memory locations. a write enable instruction must be executed before the device will accept the program security register instruction (status register bit wel= 1). the instruction i s initiated by driving the /cs pin low then shifting the instruction code 42h followed by a 24 - bit address (a23 - a0) and at least one data byte, into the di pin. the /cs pin must be held low for the entire length of the instruction while data is being sen t to the device. address a23 - 16 a15 - 12 a11 - 8 a7 - 0 security register #1 00h 0 0 0 1 0 0 0 0 byte address security register #2 00h 0 0 1 0 0 0 0 0 byte address security register #3 00h 0 0 1 1 0 0 0 0 byte address the program security register instruct ion sequence is shown in figure 3 6 . the se curity register lock bits lb[3:1] in the status register - 2 can be used to otp protect the security registers. once a lock bit is set to 1, the corresponding security register will be permanently locked, program sec urity register instruction to that register will be ignored (see 7 .1.9, 7 .2.21 for detail descriptions). figure 3 6 . program security registers instruction sequence /cs clk di (io 0 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (42h) 8 9 10 28 29 30 39 24-bit address 23 22 21 3 2 1 * /cs clk di (io 0 ) 40 41 42 43 44 45 46 47 data byte 2 48 49 50 52 53 54 55 2072 7 6 5 4 3 2 1 0 51 39 0 31 0 32 33 34 35 36 37 38 data byte 1 7 6 5 4 3 2 1 * mode 0 mode 3 data byte 3 2073 2074 2075 2076 2077 2078 2079 0 data byte 256 * 7 6 5 4 3 2 1 0 * 7 6 5 4 3 2 1 0 * = msb *
w25q16cv - 60 - 7.2.39 read security registers (48h) the read security register instruction is similar to the fast read instruction and allows one or more data bytes to be sequentially read from o ne of the three security registers. the instruction is initiated by driving the /cs pin low and then shifting the instruction code 48h followed by a 24 - bit address (a2 3 - a0) and eight dummy clocks into the di pin. the code and address bits are latched on the rising edge of the clk pin. after the address is received, the data byte of the addressed memory location will be shifted out on the do pin at the falling edge of clk with most significant bit (msb) first. the byte address is automatically incremented to the next byte address after each byte of data is shifted out. once the byte address reaches the last byte of the register (byte ffh), it will reset to 00h, the firs t byte of the register, and continue to increment. the instruction is completed by driving /cs high. the read security register instruction sequence is shown in figure 3 7 . if a read security register instruction is issued while an erase, program or write c ycle is in process (busy=1) the instruction is ignored and will not have any effects on the current cycle. the read security register instruction allows clock rates from d.c. to a maximum of f r (see ac electrical characteristics). address a23 - 16 a15 - 12 a1 1 - 8 a7 - 0 security register #1 00h 0 0 0 1 0 0 0 0 byte address security register #2 00h 0 0 1 0 0 0 0 0 byte address security register #3 00h 0 0 1 1 0 0 0 0 byte address figure 3 7 . read security registers instruction sequence /cs clk di (io 0 ) do (io 1 ) mode 0 mode 3 0 1 2 3 4 5 6 7 instruction (48h) high impedance 8 9 10 28 29 30 31 24-bit address 23 22 21 3 2 1 0 data out 1 * /cs clk di (io 0 ) do (io 1 ) 32 33 34 35 36 37 38 39 dummy byte high impedance 40 41 42 44 45 46 47 48 49 50 51 52 53 54 55 7 6 5 4 3 2 1 0 7 data out 2 * 7 6 5 4 3 2 1 0 * 7 6 5 4 3 2 1 0 43 31 0 = msb *
w25q16cv publication release date: october 03 , 201 3 - 61 - revision g 8. electrical charact eristics 8.1 absolute maximum ratings (1) (2) parameters symbol conditions range unit supply voltage vcc C 0.6 to 4.6 v voltage applied to any pin v io relative to ground C 0.6 to vcc+0.4 v transient voltage on any pin v iot <20ns transient relative to ground C 2.0v to vcc+2.0v v storage temperature t stg C 65 to +150 c lead temperature t lead ( 3 ) see note ( 3 ) c electrostatic discharge voltage v esd ( 2 ) human body model C 2000 to +2000 v notes: 1.this device has been designed and tested for the specified opera tion ranges. proper operation outside of these levels is not guaranteed. exposure to absolute maximum ratings may affect device reliability. exposure beyond absolute maximum ratings may cause permanent damage. 2.jedec std jesd22 - a114a (c1=100pf, r1=1500 oh ms, r2=500 ohms). 3.compliant with jedec standard j - std - 20c for small body sn - pb or pb - free (green) assembly and the european directive on restrictions on hazardous substances (rohs) 2002/95/eu. 8.2 operating ranges parameter symbol conditions spec unit min max supply voltage vcc f r = 8 0mhz, f r = 50 mhz f r = 104 mhz, f r = 50 mhz f r = 50mhz (for e3h command) 2.7 3.0 3.0 3.6 3.6 3.6 v ambient temperature, operating t a commercial industrial 0 - 40 +70 +85 c note: 1. vcc voltage during read can operate acros s the min and max range but should not exceed 10% of the programming (erase/write) voltage.
w25q16cv - 62 - 8.3 power - u p power - down timing and requirements ( 1 ) parameter symbol spec unit min max vcc (min) to /cs low t vsl 20 s time delay before write instruction t puw 5 ms write inhibit threshold voltage v wi 1.0 2.0 v note : 1. these parameters are characterized only. 8.4 figure 38a . power - up timing and voltage levels figure 38b. power - up, power - down requi rement vcc tvsl read instructions allowed device is fully accessible tpuw /cs must track vcc program, erase and write instructions are ignored reset state vcc (max) vcc (min) v wi time vcc time / cs must track vcc during vcc ramp up / down / cs
w25q16cv publication release date: october 03 , 201 3 - 63 - revision g 8.5 dc electrical characteristics parameter symbol conditions spec unit min typ max input capacitance c in (1) v in = 0v (1) 6 pf output capacitance cout (1) v out = 0v (1) 8 pf input leakage i li 2 a i/o leakage i lo 2 a standby current i cc 1 /cs = vcc, vin = gnd or vcc 10 25 a power - down current i cc 2 /cs = vcc, vin = gnd or vcc 1 5 a current read data / dual /quad 1mhz i cc 3 ( 2 ) c = 0.1 vcc / 0.9 vcc do = open 4 / 5/6 6/7.5/9 ma current read data / dual /quad 33mhz i cc 3 ( 2 ) c = 0.1 vcc / 0.9 vcc do = open 6/ 7/8 9/10.5/12 ma current read data / dual /quad 50mhz i cc 3 ( 2 ) c = 0.1 vcc / 0.9 vcc do = open 7 / 8/9 10/12/13.5 ma current read data / dual output read /quad output read 80mhz i cc 3 ( 2 ) c = 0.1 vcc / 0.9 vcc do = open 10 / 11/12 15/16.5/18 ma current write status register i cc 4 /cs = vcc 10 15 ma current page program i cc 5 /cs = vcc 10 2 5 ma current sector/block erase i cc 6 /cs = vcc 12 25 ma current chip erase i cc 7 /cs = vcc 20 25 ma input low voltage v il vc c x 0.3 v input high voltage v ih vcc x 0.7 v output low voltage v ol i ol = 100 a 0.2 v output high voltage v oh i oh = C 100 a vcc C 0.2 v notes: 1 . tested on sample basis and specified through design and characterization data. ta = 25 c, vcc = 3 v. 2 . checker board patter n.
w25q16cv - 64 - 8.6 ac measurement conditions ( 1 ) parameter symbol spec unit min max load capacitance c l 30 pf input rise and fall times t r , t f 5 ns input pulse voltages v in 0.2 vcc to 0.8 vcc v input timing reference voltages in 0.3 vcc to 0.7 vcc v output timing reference voltages o ut 0. 5 vcc to 0. 5 vcc v note: 1. output hi - z is defined as the point where data out is no longer driven. figure 39 . ac measurement i/o waveform input and output timing reference levels input levels 0.8 vcc 0.2 vcc 0.5 vcc
w25q16cv publication release date: october 03 , 201 3 - 65 - revision g 8.7 ac electrical characteri stics description symbol alt spec unit min typ max clock frequency for all instructions, except read data (03h) & octal word read (e3h) 3.0v - 3.6v vcc & commercial temperature f r f c 1 d.c. 104 mhz clock frequency for all instructions, except read d ata (03h) & octal word read (e3h) 2.7v - 3.6v vcc & industrial temperature f r f c 2 d.c. 80 mhz clock frequency for octal word read quad i/o(e3h) 3.0v - 3.6v & industrial temperature f r f c 3 d.c. 50 mhz clock freq. read data instruction ( 03h ) f r f c 4 d.c. 50 mhz clock high, low time except read data (03h) t clh , t cll ( 1) 6 ns clock high, low time for read data (03h) instruction t crlh , t crll ( 1) 8 ns clock rise time peak to peak t clch ( 2) 0.1 v/ns clock fall time peak to peak t chcl ( 2) 0.1 v/ns / cs active setup time relative to clk t slch t css 5 ns /cs not active hold time relative to clk t chsl 5 ns data in setup time t dvch t dsu 2 ns data in hold time t chdx t dh 5 ns /cs active hold time relative to clk t chsh 5 ns /cs not active s etup time relative to clk t shch 5 ns /cs deselect time t shsl 2 t csh 50 ns output disable time t shqz ( 2) t dis 7 ns clock low to output valid t clqv t v 7 / 6 ns output hold time t clqx t ho 0 ns /hold active setup time relative to clk t hlch 5 ns continued C next page
w25q16cv - 66 - 8.8 ac electrical characteristics ( contd) description symbol alt spec unit min typ max /hold active hold time relative to clk t chhh 5 ns /hold not active setup time relative to clk t hhch 5 ns /hold not active hold tim e relative to clk t chhl 5 ns /hold to output low - z t hhqx ( 2) t lz 7 ns /hold to output high - z t hlqz ( 2) t hz 12 ns write protect setup time before /cs low t whsl ( 3) 20 ns write protect hold time after /cs high t shwl ( 3) 100 ns /cs high to power - down mode t dp ( 2) 3 s /cs high to standby mode without electronic signature read t res 1 ( 2) 3 s /cs high to standby mode with electronic signature read t res 2 ( 2) 1.8 s /cs high to next instruction after suspend t sus ( 2) 20 s write status r egister time t w 10 15 ms byte program time (first byte) (4 ) t bp1 30 50 s additional byte program time (after first byte) (4 ) t bp2 2.5 12 s page program time t pp 0.7 3 ms sector erase time (4kb) t se 30 200 /400 (5) ms block erase time ( 32 kb) t be 1 120 800 ms block erase time (64kb) t be 2 150 1 000 ms chip erase time t ce 3 10 s notes: 1. clock high + clock low must be less than or equal to 1/f c . 2. val ue guaranteed by design and/or characterization, not 100% tested in production. 3. o nly applicable as a constraint for a write status register instruction when srp [1:0]=( 0 ,1) . 4. for multiple bytes after first byte within a page, t bpn = t bp1 + t bp2 * n (typical) and t bpn = t bp1 + t bp2 * n (max), where n = number of bytes programmed . 5. ma x value tse with <50k cycles is 200ms and >50k & <100k cycles is 400ms.
w25q16cv publication release date: october 03 , 201 3 - 67 - revision g 8.9 serial output timing 8.10 serial input timing 8.11 /hold timing 8.12 /wp timing /cs clk io output tclqx tclqv tclqx tclqv tshqz tcll lsb out tclh msb out /cs clk io input tchsl msb in tslch tdvch tchdx tshch tchsh tclch tchcl lsb in tshsl /cs clk io output /hold tchhl thlch tchhh thhch thlqz thhqx io input /cs clk /wp twhsl tshwl io input write status register is allowed write status register is not allowed
w25q16cv - 68 - 9. p ackage specification 9.1 8 - pin soic 150 - mil (package code sn) symbol millimeters inches min max min max a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 c 0.19 0.25 0.008 0.010 e (3) 3.80 4.00 0.150 0.157 d (3) 4.80 5.00 0.188 0.196 e (2) 1.27 bsc 0.050 bsc h e 5.80 6.20 0.228 0.244 y (4) --- 0.10 --- 0.004 l 0.40 1.27 0.016 0.050 0 10 0 10 notes: 1. controlling dimensions: millimeters, unless otherwise specified. 2. bsc = basic lead spacing between centers. 3. dimensions d and e do not include mold flash protrusions and should be measured from the bottom of the package. 4 . formed leads coplanarity with respect to seating plane shall be within 0.004 inches. l c d a1 a e b seating plane y 0.25 gauge plane e h e 4 1 5 8 l c d a1 a e b b b seating plane y 0.25 gauge plane e h e e h e 4 1 5 8
w25q16cv publication release date: october 03 , 201 3 - 69 - revision g 9.2 8 - pin vsop 150 - mil (package code sv) symbol millimeters inches min nom max min nom max a --- --- 1.00 --- --- 0.039 a1 0.05 0.10 0.15 0.002 0.004 0.006 a2 0.75 0.80 0.85 0.030 0.031 0.033 q 0.19 0.20 0.21 0.007 0.008 0.008 b 0.33 --- 0.51 0.013 --- 0.020 c 0.125 bsc 0.005 bsc d 4.80 4.90 5.00 0.189 0.193 0.197 e 5.80 6.00 6.20 0.228 0.236 0.244 e1 3.80 3.90 4.00 0.150 0.154 0.157 e 1.27 bsc 0.050 bsc l 0 .40 0.71 1.27 0.016 0.028 0.050 0 --- 10 0 --- 10 notes: 1. dimension d does not include mold flash, protrusions or gate burrs. mold flash, protrusions and gate burrs shall not exceed 0.15mm per side. 2. dimension e1 does not include inter - l ead flash or protrusions. inter - lead flash and protrusions shall not exceed 0.25mm per side.
w25q16cv - 70 - 9.3 8 - pin soic 208 - mil (package code ss) symbol millimeters inches min nom max min nom max a 1.75 1.95 2.16 0.069 0.077 0.085 a1 0.05 0.15 0.25 0.002 0.006 0 .010 a2 1.70 1.80 1.91 0.067 0.071 0.075 b 0.35 0.42 0.48 0.014 0.017 0.019 c 0.19 0.20 0.25 0.007 0.008 0.010 d 5.18 5.28 5.38 0.204 0.208 0.212 d1 5.13 5.23 5.33 0.202 0.206 0.210 e 5.18 5.28 5.38 0.204 0.208 0.212 e1 5.13 5.23 5.33 0.202 0.206 0. 210 e (2) 1.27 bsc . 0.050 bsc . h 7.70 7.90 8.10 0.303 0.311 0.319 l 0.50 0.65 0.80 0.020 0.026 0.031 y --- --- 0.10 --- --- 0.004 0 --- 8 0 --- 8 notes: 1. controlling dimensions: millimeters, unless otherwise specifi ed. 2. bsc = basic lead spacing between centers. 3. dimensions d1 and e1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. formed leads coplanarity with respect to seating plane shall be within 0.004 inches. gauge plane gauge plane
w25q16cv publication release date: october 03 , 201 3 - 71 - revision g 9.4 8 - pin vsop 208 - mil (package code st) symbol millimeters inches min nom max min nom max a D D 1.00 D D 0.039 a1 0.05 0.10 0.15 0.002 0.004 0.006 a2 0.75 0.80 0.85 0.030 0.031 0.033 b 0.35 0.42 0.48 0.014 0.017 0.019 c 0.127 ref 0.005 ref d 5.18 5.28 5.38 0.204 0.208 0.212 e 7.70 7.90 8.10 0.303 0.311 0.319 e1 5.18 5.28 5.38 0.204 0.208 0 .212 e D 1.27 D D 0.050 D l 0.50 0.65 0.80 0.020 0.026 0.031 y D D 0.10 D D 0.004 0 D 8 0 D 8
w25q16cv - 72 - 9.5 8 - pin pdip 300 - mil (package code da) symbo l millimeters inches min nom max min nom max a --- --- 5.33 --- --- 0.210 a1 0.38 --- --- 0.015 --- --- a2 3.18 3.30 3.43 0.125 0.130 0.135 d 9.02 9.27 10.16 0.355 0.365 0.400 e 7.62 bsc. 0.300 bsc. e1 6.22 6.35 6.48 0.245 0.250 0.255 l 2.92 3.30 3.81 0.115 0.130 0.150 e b 8.51 9.02 9.53 0.335 0.355 0.375 0 7 15 0 7 15
w25q16cv publication release date: october 03 , 201 3 - 73 - revision g 9.6 8 - pad wson 6 x5mm (package code zp) symbol millimeters inches min nom max min nom max a 0.70 0.75 0.80 0.02 8 0.0 30 0.031 a1 0.00 0.02 0.05 0.000 0.00 1 0.00 2 b 0.35 0.40 0.48 0.01 4 0.01 6 0.01 9 c --- 0.20 ref. --- --- 0.008 ref. --- d 5.90 6.00 6.10 0.232 0.2 36 0.240 d2 3.35 3.40 3.45 0.13 2 0.13 4 0.13 6 e 4.90 5.00 5.10 0.19 3 0.19 7 0.20 1 e2 4.25 4.30 4.35 0.167 0.169 0.171 e (2) 1.27 bsc . 0.050 bsc . l 0.55 0.60 0.65 0.02 2 0.02 4 0.02 6 y 0.00 --- 0.075 0.000 --- 0.00 3
w25q16cv - 74 - 8 - pad wson 6x5mm contd. symbo l millimeters inches min nom max min nom max solder pattern m 3.40 0.13 4 n 4.30 0.169 p 6.00 0.236 q 0.50 0.0 20 r 0.75 0.02 6 notes: 1. advanced packaging information; please contact winbond for the latest minimum and maxi mum specifications. 2. bsc = basic lead spacing between centers. 3. dimensions d and e do not include mold flash protrusions and should be measured from the bottom of the package. 4. the metal pad area on the bottom center of the package is connected to th e device ground (gnd pin). avoid placement of exposed pcb vias under the pad.
w25q16cv publication release date: october 03 , 201 3 - 75 - revision g 9.7 16 - pin soic 300 - mil (package code sf) symbol millimeters inches min nom max min nom max a 2.36 2.49 2.64 0.093 0.098 0.104 a1 0.10 --- 0.30 0.004 --- 0.012 a 2 --- 2.31 --- --- 0.091 --- b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.18 0.23 0.28 0.007 0.009 0.011 d 10.08 10.31 10.49 0.397 0.406 0.413 e 10.01 10.31 10.64 0.394 0.406 0.419 e 1 7.39 7.49 7.59 0.291 0.295 0.299 e (2) 1.27 bsc . 0.050 bsc . l 0. 38 0.81 1.27 0.015 0.032 0.050 y --- --- 0.076 --- --- 0.003 0 --- 8 0 --- 8 notes: 1. controlling dimensions: inches, unless otherwise specified. 2. bsc = basic lead spacing between centers. 3. dimensions d and e1 do not include mold flash protrusions and should be measured from the bottom of the package. gauge plane detail a gauge plane detail a
w25q16cv - 76 - 9.8 24 - ball tfbga 8x6 - m m (package cod e tb, 5x5 - 1 ball array ) symbol millimeters inches min nom max min nom max a --- --- 1.20 --- --- 0.047 a1 0.25 0.30 0.35 0.01 0 0.0 12 0.0 14 a2 --- 0.85 --- - -- 0.033 --- b 0.35 0.40 0.45 0.014 0.0 16 0.0 18 d 7.90 8.00 8.10 0 .311 0.31 5 0.31 9 d 1 4.00 bsc 0.157 bsc e 5.90 6.00 6.10 0.232 0.236 0.240 e 1 4.00 bsc 0.157 bsc se 1.00 typ 0.039 typ sd 1.00 typ 0.039 typ e 1.00 bsc 0.039 bsc note: ball land: 0.45mm. ball opening: 0.35mm pcb ball land suggested <= 0.35mm
w25q16cv publication release date: october 03 , 201 3 - 77 - revision g 9.9 24 - ball tfbga 8x6 - m m (package cod e tc , 6x4 ball array ) symbol millimeters inches min nom max min nom max a --- --- 1.20 --- --- 0.047 a1 0.25 0.30 0.35 0.01 0 0.0 12 0.0 14 b 0.35 0.40 0.45 0.014 0.0 1 6 0.0 18 d 7.95 8.00 8.05 0 .313 0.31 5 0.31 7 d 1 5.00 bsc 0.197 bsc e 5.95 6.00 6.05 0.234 0.236 0.238 e 1 3.00 bsc 0.118 bsc e 1.00 bsc 0.039 bsc
w25q16cv - 78 - 10. ordering information notes: 1. t he w prefix is not included on the part marking. 2. only the 2nd le tter is used for the part marking; wson package type zp is not used for the part marking. 3. standard bulk shipments are in tube (shape e). please specify alternate packing method, such as tape and reel (sh a pe t) or tray (shape s) , when placing orders. 4. for shipments with special options (p/l/q options) , please specify when placing orders. 5. for special option q devices, qe bit may be reset to 0 if write status register command is only followed by 8 - bit data (status register - 1). w ( 1 ) 25q 16c v xx ( 2 ) w = winbond 25 q = s pi flash serial flash memory with 4 kb sectors, dual /quad i/o 16c = 16m - bit v = 2.7v to 3.6v ( 3,4 ,5 ) g = green package (lead - free, rohs compliant, halogen - free (tbba), antimony - oxide - free sb 2 o 3 ) p = green package with status register power - down & otp enabled l = special driver strength version for certain applications q = green package with qe=1 in status register - 2 s n = soic - 8 150 - mil sv = vsop - 8 150 - mil zp = wson - 8 6x5 - mm sf = soic - 16 300 - mil ss = soic - 8 208 - mil st = vsop - 8 208 - mil da = pdip - 8 300 - mil tb = 5x5 - 1 balls tfbga 8x6 - mm tc = 6x4 balls tfbga 8x6 - mm i = industrial ( - 40 c to +85c)
w25q16cv publication release date: october 03 , 201 3 - 79 - revision g 10.1 valid pa rt numbers and top side marking the following table provides the valid part numbers for the w25q16cv spiflash memory . please contact winbond for specific availability by density and package type. winbond spiflash memories use an 1 2 - digit product number for ordering. howe ver, due to limited space, the top side marking on all packages use an abbreviated 10 - digit number. part numbers for industrial grade temperature: package type density product number top side marking sn (2) soic - 8 150mil 16m - bit w 25q16cvsnig w25q16cvsnip 25q16cvnig 25q16cvnip s v (2) vsop - 8 150mil 16m - bit w25q16cvs v ig w25q16cvs v ip 25q16cv v ig 25q16cv v ip ss soic - 8 208mil 16m - bit w25q16cvssig w25q16cvssip w25q16cvssi l w25q16cvssi q 25q1 6cvsig 25q16cvsip 25q16cvsi l 25q16cvsi q s t (2) vsop - 8 208mil 16m - bit w25q16cvs t ig w25q16cvs t ip 25q16cv t ig 25q16cv t ip sf soic - 16 300mil 16m - bit w25q16cvsfig w25q16cvsfip w25q16cvsf i q 25q16cvfig 25q16cvfip 2 5q16cvfi q zp wson - 8 6x5mm 16m - bit w25q16cvzpig w25q16cvzpip 25q16cvig 25q16cvip da pdip - 8 300mil 16m - bit w25q16cvdaig w25q16cvdaip 25q16cvaig 25q16cvaip tb (2) tfbga - 24 8x6mm 5x5 ball array 16m - bit w25q16 cvtbig w25q16cvtbip 25q16cvbig 25q16cvbip tc (2) tfbga - 24 8x6mm 6x4 ball array 16m - bit w25q16cvtcig w25q16cvtcip 25q16cvcig 25q16cvcip notes: 1. wson package type zp is not used in the top side marking. 2. these package types are speci al order o nly, please contact winbond for more information.
w25q16cv - 80 - 11. revision history version date page description a 01/04/10 new create preliminary b 0 7 / 15 /10 17 61 , 64 5, 62 & 6 6 5, 10, 21, 56 - 58 5, 75 & 76 updated memory protection table updated parameter vil/vih, icc , tse updated fr & f r frequenices added sfdp feature added automotive temperature c 0 4 / 01 /1 1 9, 76 - 78, 23 - 69, 47 57 - 59 added tfbga package updated diagrams added /wp timing diagram updated suspend description updated sfdp to jedec 1.0 removed preliminary designator d 10/21/11 9, 76, 78 - 79 added 5x5 ball array tfbga package e 0 4 / 20 /12 69, 71 6 1 , 78 - 80 78 - 79 added vsop packages updated operating temperature grades added q order option f 08/06/12 10, 13, 62 63 updated power down requirement up dated operating current g 03 / 10 /1 3 5,61 - 66,78 removed automotive and industrial plus grade m odified dc /ac electrical characteristics
w25q16cv publication release date: october 03 , 201 3 - 81 - revision g trademarks winbond and s piflash are trademarks of winbond electronics corporation . all other marks are the property of their respective owner. important notice winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instr uments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. further more, winbond products are not intended for applications wherein failure of winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully i ndemnify winbond for any damages resulting from such improper use or sales. information in this document is provided solely in connection with winbond products. winbond reserves the right to make changes, corrections, modifications or improvements to this document and the products and services described herein at any time, without notice.

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